Strain-induced switching in field effect transistor based on zigzag graphene nanoribbons

2021 ◽  
pp. 413304
Author(s):  
Maliheh Azadparvar ◽  
Hosein Cheraghchi
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbons ◽  
Effect Transistor ◽  
Zigzag Graphene Nanoribbons

scholarly journals Graphene nanoribbon blends with P3HT for organic electronics

Nanoscale ◽  
2014 ◽  
Vol 6 (12) ◽  
pp. 6301-6314 ◽  
Author(s):  
Mirella El Gemayel ◽  
Akimitsu Narita ◽  
Lukas F. Dössel ◽  
Ravi S. Sundaram ◽  
Adam Kiersnowski ◽  
...  
Keyword(s):  
Organic Electronics ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbons ◽  
Graphene Nanoribbon ◽  
Solution Processed ◽  
Regioregular Poly ◽  
Effect Transistor

Solution processed 18 arm-chair graphene nanoribbons embedded in a matrix of regioregular poly(3-hexylthiophene) show improved photoconductivity and field-effect transistor performance.

Design of bilayer graphene nanoribbon tunnel field effect transistor

Circuit World ◽  
2021 ◽  
Vol ahead-of-print (ahead-of-print) ◽  
Author(s):  
Ramesh Kumar Vobulapuram ◽  
Javid Basha Shaik ◽  
Venkatramana P. ◽  
Durga Prasad Mekala ◽  
Ujwala Lingayath
Keyword(s):  
Field Effect ◽  
Large Scale ◽  
Field Effect Transistor ◽  
Graphene Nanoribbons ◽  
Content Type ◽  
Large Scale Integration ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
A New Technique ◽  
Scale Integration

Purpose The purpose of this paper is to design novel tunnel field effect transistor (TFET) using graphene nanoribbons (GNRs). Design/methodology/approach To design the proposed TFET, the bilayer GNRs (BLGNRs) have been used as the channel material. The BLGNR-TFET is designed in QuantumATK, depending on 2-D Poisson’s equation and non-equilibrium Green’s function (NEGF) formalism. Findings The performance of the proposed BLGNR-TFET is investigated in terms of current and voltage (I-V) characteristics and transconductance. Moreover, the proposed device performance is compared with the monolayer GNR-TFET (MLGNR-TFET). From the simulation results, it is investigated that the BLGNR-TFET shows high current and gain over the MLGNR-TFET. Originality/value This paper presents a new technique to design GNR-based TFET for future low power very large-scale integration (VLSI) devices.

scholarly journals First-principles study of adsorption effect of A-Z-A graphene nanoribbons field effect transistor

2012 ◽  
Vol 61 (2) ◽  
pp. 023102
Author(s):  
Qin Jun-Rui ◽  
Chen Shu-Ming ◽  
Zhang Chao ◽  
Chen Jian-Jun ◽  
Liang Bin ◽  
...  
Keyword(s):  
First Principles ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbons ◽  
Adsorption Effect ◽  
First Principles Study ◽  
Effect Transistor
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