Non-monotonous temperature dependence of the second peak effect in an excessively-oxygen doped Bi2Sr2CaCu2O8+δ single crystal

2004 ◽  
Vol 412-414 ◽  
pp. 472-477 ◽  
Author(s):  
D. Darminto ◽  
M.O. Tjia
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Peak Effect ◽  
Second Peak

Growth of high-quality Bi2Sr2CaCu2Oz crystal and characterization

1997 ◽  
Vol 12 (10) ◽  
pp. 2522-2525 ◽  
Author(s):  
H. Faqir ◽  
G. Vacquier ◽  
H. Chiba ◽  
M. Kikuchi ◽  
Y. Muraoka ◽  
...  
Keyword(s):  
Single Crystal ◽  
Stoichiometric Composition ◽  
Peak Effect ◽  
Structure Characterization ◽  
X Ray Diffraction ◽  
High Quality ◽  
Growth Technique ◽  
Composition Structure ◽  
Second Peak

We report growth of high-quality Bi2Sr2CaCu2Oz single crystals with dimensions 2 × 1 × 0.03 mm3 with a melt and growth technique. The composition of this crystal is homogeneous and very close to the stoichiometric composition. Structure characterization of a single crystal was realized by measuring the (001) x-ray diffraction. The lattice parameters of a typical crystal are a = 5.414(2) Å, b = 5.413(2) Å, and c = 30.823(10) Å. The superconducting temperature Tc = 95 K with a sharp transition width (10–90% level) between 6 and 10 K was determined from resistivity and dc susceptibility. We have measured the magnetization of Bi2Sr2CaCu2Oz single crystal under magnetic field applied along the c-axis. The anomalous second peak effect appeared between 20 and 30 K. We discuss the qualities of these crystals.

Temperature dependence of impact deformation behavior of single crystal Ni based superalloy

2015 ◽  
Vol 31 (15) ◽  
pp. 1860-1866 ◽  
Author(s):  
Y. H. Yang ◽  
J. J. Yu ◽  
X. F. Sun ◽  
T. Jin ◽  
H. R. Guan
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Deformation Behavior ◽  
Impact Deformation

TEMPERATURE DEPENDENCE OFRHSIN ALUMINUM‐IMPLANTED LAYER INn‐TYPE SINGLE CRYSTAL SILICON

1969 ◽  
Vol 14 (9) ◽  
pp. 255-258 ◽  
Author(s):  
Tadatsugu Itoh ◽  
Taroh Inada ◽  
Masao Ishiki ◽  
Kenshi Menabe
Keyword(s):  
Single Crystal ◽  
Temperature Dependence ◽  
Single Crystal Silicon ◽  
Crystal Silicon

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

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