Surface and interface reactions of catalysts for carbon nanotube growth on Si substrates studied by soft X-ray photoelectron spectroscopy

2004 ◽  
Vol 24 (1-2) ◽  
pp. 19-25 ◽  
Author(s):  
F Maeda ◽  
E Laffosse ◽  
Y Watanabe ◽  
S Suzuki ◽  
Y Homma ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Photoelectron Spectroscopy ◽  
X Ray ◽  
Surface And Interface ◽  
Si Substrates ◽  
Interface Reactions ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

X-Ray and Morphological Characterization of Al-O Thin Films Used for Vertically Aligned Single-Walled Carbon Nanotube Growth

2012 ◽  
Vol 620 ◽  
pp. 213-218 ◽  
Author(s):  
Mohd Asyadi Azam ◽  
Mohd Warikh Abd Rashid ◽  
Kazuki Isomura ◽  
Akihiko Fujiwara ◽  
Tatsuya Shimoda
Keyword(s):  
Photoelectron Spectroscopy ◽  
Catalyst Support ◽  
Morphological Characterization ◽  
Single Walled Carbon Nanotube ◽  
X Ray ◽  
Electron Microscopies ◽  
Vertically Aligned ◽  
Carbon Nanotube Growth ◽  
20 Nm ◽  
Nanotube Growth

Al oxide (Al-O) films used as catalyst-support layer for vertical growth of carbon nanotubes (CNTs) were characterized by means of X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), transmission, and scanning electron microscopies (TEM and SEM). EB-deposited Al films (20 nm) were thermally-oxidized at 400 o C (10 min, static air) to produce the surface structure of Al-O. The Al-O was found amorphous and after the incorporation with Co catalyst, the grown CNTs were twisted together before vertically grown. The prepared Al-O surface is an electron-acceptor-dominated (oxygen-rich) surface where the formation of active catalyst could be enhanced to promote the vertically aligned CNT growth.

Carbon Nanotube T Junctions: Formation and Properties

2008 ◽  
Vol 8 (1) ◽  
pp. 88-98 ◽  
Author(s):  
Po-Wen Chiu
Keyword(s):  
Carbon Nanotube ◽  
Photoelectron Spectroscopy ◽  
Three Dimensions ◽  
Photoelectron Spectra ◽  
Transistor Channel ◽  
X Ray ◽  
Si Substrates ◽  
Lift Off ◽  
Linker Molecules ◽  
Functionalized Nanotubes

The formation of carbon nanotube T junctions (CNTJs) and their transport properties are reviewed. The CNTJs were formed by coupling chemically functionalized nanotubes with linker molecules. Both end-to-side and end-to-end intermolecular junctions can be assembled by reacting chloride terminated nanotubes with aliphatic diamines. The functionalized nanotube mats were characterized by Raman spectroscopy and X-ray photoelectron spectroscopy. The incorporation of functional groups into nanotubes is indicated by the pronounced shift of tangential vibration modes in Raman spectra and of carbon 1s binding energy in X-ray photoelectron spectra. For transport measurements the functionalized nanotubes were adsorbed on Si substrates, and subsequent electrodes were painted on top of the selected T junctions by lithography and lift-off techniques. The bar of the "T" is used as the transistor channel and the stem of the "T" is used as the gate. In this configuration, the active area is confined to a few nanometers in all three dimensions.

Understanding properties of engineered catalyst supports using contact angle measurements and X-Ray reflectivity

Nanoscale ◽  
2016 ◽  
Vol 8 (5) ◽  
pp. 2927-2936 ◽  
Author(s):  
Placidus B. Amama ◽  
Ahmad E. Islam ◽  
Sammy M. Saber ◽  
Daniel R. Huffman ◽  
Benji Maruyama
Keyword(s):  
Contact Angle ◽  
Carbon Nanotube ◽  
Growth Behavior ◽  
Catalyst Supports ◽  
X Ray ◽  
Angle Measurements ◽  
Contact Angle Measurements ◽  
Substrate Engineering ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

Using a combination of contact angle measurements and X-ray reflectivity, new correlations between the physicochemical properties of pristine and engineered catalyst substrates and carbon nanotube growth behavior have been established. This study advances the use of a non-thermochemical approach for catalyst substrate engineering.

In SituStudy of Iron Catalysts for Carbon Nanotube Growth Using X-Ray Diffraction Analysis

2004 ◽  
Vol 43 (No. 4A) ◽  
pp. L471-L474 ◽  
Author(s):  
Kenji Nishimura ◽  
Nobuharu Okazaki ◽  
Lujun Pan ◽  
Yoshikazu Nakayama
Keyword(s):  
Carbon Nanotube ◽  
Diffraction Analysis ◽  
Iron Catalysts ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

Aligned Single-Walled Carbon Nanotube Growth on Patterned SiO2/Si Substrates

2015 ◽  
pp. 131-141
Author(s):  
Yasuhide Ohno ◽  
Takafumi Kamimura ◽  
Kenzo Maehashi ◽  
Koichi Inoue ◽  
Kazuhiko Matsumoto
Keyword(s):  
Carbon Nanotube ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Si Substrates ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

Epitaxial Ag Layers on Si Substrates as a Buffer Layer for Carbon Nanotube Growth

2008 ◽  
Vol 47 (5) ◽  
pp. 3742-3747
Author(s):  
Satoshi Oida ◽  
Akira Sakai ◽  
Osamu Nakatsuka ◽  
Masaki Ogawa ◽  
Shigeaki Zaima
Keyword(s):  
Carbon Nanotube ◽  
Buffer Layer ◽  
Si Substrates ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

scholarly journals In situcharacterization of the carbon nanotube growth process by X-ray diffraction

2011 ◽  
Vol 67 (a1) ◽  
pp. C123-C124
Author(s):  
C. Baehtz ◽  
C. R. Wirth ◽  
B. C. Bayer ◽  
S. Hofmann ◽  
J. von Borany
Keyword(s):  
Carbon Nanotube ◽  
Growth Process ◽  
X Ray Diffraction ◽  
X Ray ◽  
Carbon Nanotube Growth ◽  
Nanotube Growth

Investigation of the Effect of Uv-Assisted Oxidation and Nitridation of Hafnium Metal Films

2003 ◽  
Vol 780 ◽  
Author(s):  
C. Essary ◽  
V. Craciun ◽  
J. M. Howard ◽  
R. K. Singh
Keyword(s):  
Uv Radiation ◽  
Photoelectron Spectroscopy ◽  
Grazing Angle ◽  
X Ray Diffraction ◽  
Metal Thin Films ◽  
X Ray ◽  
Force Microscopy ◽  
Si Substrates ◽  
Atomic Force ◽  
Silicon Interface

AbstractHf metal thin films were deposited on Si substrates using a pulsed laser deposition technique in vacuum and in ammonia ambients. The films were then oxidized at 400 °C in 300 Torr of O2. Half the samples were oxidized in the presence of ultraviolet (UV) radiation from a Hg lamp array. X-ray photoelectron spectroscopy, atomic force microscopy, and grazing angle X-ray diffraction were used to compare the crystallinity, roughness, and composition of the films. It has been found that UV radiation causes roughening of the films and also promotes crystallization at lower temperatures.Furthermore, increased silicon oxidation at the interface was noted with the UVirradiated samples and was shown to be in the form of a mixed layer using angle-resolved X-ray photoelectron spectroscopy. Incorporation of nitrogen into the film reduces the oxidation of the silicon interface.

Sign in / Sign up

Export Citation Format

Share Document