scholarly journals Transport properties of 1D tight-binding disordered models: the Hamiltonian map approach

2004 ◽  
Vol 25 (1) ◽  
pp. 13-22 ◽  
Author(s):  
V. Dossetti-Romero ◽  
F.M. Izrailev ◽  
A.A. Krokhin
2009 ◽  
Vol 80 (3) ◽  
Author(s):  
J. A. Fürst ◽  
J. Hashemi ◽  
T. Markussen ◽  
M. Brandbyge ◽  
A. P. Jauho ◽  
...  

2009 ◽  
Vol 23 (20n21) ◽  
pp. 4138-4149 ◽  
Author(s):  
STEPHEN A. WELLS ◽  
CHI-TIN SHIH ◽  
RUDOLF A. RÖMER

There is increasing evidence that DNA can support a considerable degree of charge transport along the strand by hopping of holes from one base to another, and that this charge transport may be relevant to DNA regulation, damage detection and repair. A surprisingly useful amount of insight can be gained from the construction of simple tight-binding models of charge transport, which can be investigated using the transfer-matrix method. The data thus obtained indicate a correlation between DNA charge-transport properties and the locations of cancerous mutation. We review models for DNA charge transport and their extension to include more physically realistic diagonal-hopping terms.


1995 ◽  
Vol 52 (5) ◽  
pp. 3274-3279 ◽  
Author(s):  
Felix M. Izrailev ◽  
Tsampikos Kottos ◽  
G. P. Tsironis

2018 ◽  
Vol 32 (03) ◽  
pp. 1850016
Author(s):  
Yun-Lei Sun ◽  
En-Jia Ye

In this work, we theoretically study the linear AC transport properties in T-stub and crossed zigzag silicene nanosystems. The DC conductance and AC emittance are numerically calculated based on the tight-binding approach and AC transport theory, by considering the nearest-neighbor hopping, second-nearest-neighbor spin-orbit interaction (SOI) and external electric field. The relatively strong SOI of silicene was demonstrated to induce a topological quantum edge state in the nanosystems by the local density of states, which eliminates the AC emittance response at the Dirac point. Further investigations suggest that the SOI-induced AC transport is topologically protected from the changes of geometrical size. Moreover, the AC transport properties of these nanosystems can be tuned by the external electric field, which would open an energy gap and destroy the topological quantum state, making them trivial band insulators.


2003 ◽  
Vol 13 (03) ◽  
pp. 849-871 ◽  
Author(s):  
TSUNEYA ANDO

A brief review is given on electronic and transport properties of carbon nanotubes mainly from a theoretical point of view. The topics include a description of electronic states in a tight-binding model and in an effective-mass or k · p scheme. Transport properties are discussed including absence of backward scattering except for scatterers with a potential range smaller than the lattice constant, its extension to multi-bands cases, and long-wavelength phonons and electron-phonon scattering.


1997 ◽  
Vol 55 (8) ◽  
pp. 5337-5343 ◽  
Author(s):  
Jingbo Li ◽  
Zhao-Qing Zhang ◽  
Youyan Liu

Sign in / Sign up

Export Citation Format

Share Document