Energy states in InAs–GaAs quantum dots-in-asymmetric-well infrared photodetector structure

2006 ◽  
Vol 32 (1-2) ◽  
pp. 524-527 ◽  
Author(s):  
H.D. Nam ◽  
L. Doyennette ◽  
J.D. Song ◽  
W.J. Choi ◽  
H.S. Yang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Infrared Photodetector ◽  
Energy States

scholarly journals Electronic properties and quasi-zero-energy states of graphene quantum dots

2021 ◽  
Vol 103 (23) ◽  
Author(s):  
H. V. Grushevskaya ◽  
G. G. Krylov ◽  
S. P. Kruchinin ◽  
B. Vlahovic ◽  
Stefano Bellucci
Keyword(s):  
Quantum Dots ◽  
Electronic Properties ◽  
Graphene Quantum Dots ◽  
Zero Energy ◽  
Energy States

Synthesis of HgTe colloidal quantum dots for infrared photodetector

2021 ◽  
Vol 291 ◽  
pp. 129523
Author(s):  
Dan Liu ◽  
Sen Wen ◽  
Yuxiao Guo ◽  
Xingtian Yin ◽  
Wenxiu Que
Keyword(s):  
Quantum Dots ◽  
Colloidal Quantum Dots ◽  
Infrared Photodetector

Theoretical studies of energy states of CdSe/ZnS/CdSe and ZnS/CdSe/ZnS quantum dots with an impurity

2021 ◽  
Vol 274 ◽  
pp. 115489
Author(s):  
Abdolali Rabanian ◽  
Mina Neghabi ◽  
Mehdi Zadsar ◽  
Mostafa Jafari
Keyword(s):  
Quantum Dots ◽  
Theoretical Studies ◽  
Energy States

Mid-Infrared Photodetector Using Self-Assembled InAs Quantum Dots Embedded in Modulation-Doped GaAs Quantum Wells

1999 ◽  
Vol 607 ◽  
Author(s):  
Seung-Woong Lee ◽  
Kazuhiko Hirakawa ◽  
Yozo Shimada
Keyword(s):  
Quantum Dots ◽  
Quantum Wells ◽  
High Mobility ◽  
Normal Incidence ◽  
Infrared Photodetector ◽  
Inas Quantum Dots ◽  
Operation Temperature ◽  
Long Lifetime ◽  
Quantum Dot Infrared Photodetector ◽  
Self Assembled

AbstractWe have designed and fabricated a quantum dot infrared photodetector which utilizes lateral transport of photoexcited carriers in the modulation-doped A1GaAs/GaAs two-dimensional (2D) channels. A broad photocurrent signal has been observed in the photon energy range of 100–300 meV due to bound-to-continuum intersubband absorption of normal incidence radiation in the self-assembled InAs quantum dots. A peak responsivity was as high as 2.3 A/W. The high responsivity is realized mainly by a high mobility and a long lifetime of photoexcited carriers in the modulation-doped 2D channels. Furthermore, we found that this device has high operation temperature and very high photoconductive gain.

Energy states and carrier transport processes in metamorphic InAs quantum dots

2012 ◽  
Vol 112 (3) ◽  
pp. 034309 ◽  
Author(s):  
L. Seravalli ◽  
G. Trevisi ◽  
P. Frigeri ◽  
R. J. Royce ◽  
D. J. Mowbray
Keyword(s):  
Quantum Dots ◽  
Carrier Transport ◽  
Transport Processes ◽  
Inas Quantum Dots ◽  
Energy States

Temperature and power-density-dependent inter-shell energy states in InAs/GaAs quantum dots

2006 ◽  
Vol 119-120 ◽  
pp. 183-187 ◽  
Author(s):  
F.Z. Wang ◽  
Z.H. Chen ◽  
J. Sun ◽  
L.H. Bai ◽  
S.H. Huang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Power Density ◽  
Density Dependent ◽  
Energy States ◽  
Shell Energy

Optical Properties of Graphene Quantum Dots with Fractionally Filled Degenerate Shell of Zero Energy States

2011 ◽  
Author(s):  
A. D. Güçlü ◽  
P. Potasz ◽  
P. Hawrylak ◽  
Jisoon Ihm ◽  
Hyeonsik Cheong
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Graphene Quantum Dots ◽  
Zero Energy ◽  
Energy States

Short wave infrared photodetector using p-i-p quantum dots (InAs/GaAs) for high temperature operation

2018 ◽  
Author(s):  
Subhananda Chakrabarti ◽  
Vidya P. Deviprasad ◽  
Hemant Ghadi ◽  
Debabrata Das ◽  
Debiprasad Panda ◽  
...  
Keyword(s):  
Quantum Dots ◽  
High Temperature ◽  
Short Wave ◽  
Infrared Photodetector ◽  
Short Wave Infrared ◽  
High Temperature Operation
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