Effect of post-annealing temperature on nano-structure and energy band gap of indium tin oxide (ITO) nano-particles synthesized by polymerizing–complexing sol–gel method

2010 ◽  
Vol 43 (1) ◽  
pp. 452-457 ◽  
Author(s):  
R. Sarhaddi ◽  
N. Shahtahmasebi ◽  
M. Rezaee Rokn-Abadi ◽  
M.M. Bagheri-Mohagheghi
2016 ◽  
Vol 701 ◽  
pp. 159-163 ◽  
Author(s):  
Sheen Jeff Teh ◽  
Yew Keong Sin ◽  
Kah Yoong Chan ◽  
Nisha Kumari Devaraj

Zinc oxide (ZnO) colloid has drawn significant attention recently due to its wide range of potential applications such as photonic crystals, solar cells, sensors, and other optical devices. In this work, low cost sol-gel spin coating technique was employed to synthesis ZnO colloid. The influences of stirring speed and post annealing temperature on the properties of ZnO colloid was investigated. The structural and optical properties of ZnO colloid was characterized using field-emission scanning electron microscopy (FESEM) and ultraviolet-visible (UV-Vis) spectrophotometer, respectively. Subsequently, Tauc method was used to estimate the optical band gap of the ZnO colloid based on the optical transmittance data. The effects of the stirring speed and post annealing temperature on the structural and optical properties of ZnO colloid are revealed and discussed in this paper. It was found that ZnO colloid prepared by the stirring speed of 500rpm and 400°C post annealing temperature demonstrates the best dispersity quality of colloid system.


2011 ◽  
Vol 343-344 ◽  
pp. 116-123
Author(s):  
Yu Ming Peng ◽  
Yan Kuin Su ◽  
Cheng Jye Chu ◽  
Ru Yuan Yang ◽  
Ruei Ming Huang

In this paper, the indium tin oxide (ITO) thin films were prepared by a sol-gel spin coating method and then annealed under different temperatures (400, 500 and 550°C) in a mixture atmosphere of 3.75% H2 with 96.25% N2 gases. The microstructure, optical and electrical properties of the prepared films were investigated and discussed. The XRD patterns of the ITO thin films indicated the main peak of the (222) plane and showed a high degree of crystallinity with an increase of the annealing temperature. In addition, due to the pores existing in the prepared films, the optical and electrical properties of the prepared films are degraded through the sol-gel process. Thus, the best transmittance of 70.0 %in the visible wavelength region and the lowest resistivity of about 1.1×10-2 Ω-cm were obtained when the prepared film was annealed at 550°C.


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