scholarly journals Lattice displacement and electrical property of Li-ion implanted GaN single crystal

2017 ◽  
Vol 215 ◽  
pp. 66-76
Author(s):  
Y. Torita ◽  
K. Kushida ◽  
T. Nishimura ◽  
K. Kuriyama ◽  
T. Nakamura
1991 ◽  
Vol 69 (5) ◽  
pp. 3119-3123 ◽  
Author(s):  
T. W. Kang ◽  
C. Tong ◽  
G. S. Eom ◽  
J. Y. Leem ◽  
T. W. Kim

2002 ◽  
Vol 374 (4) ◽  
pp. 614-618 ◽  
Author(s):  
Schlett V. ◽  
Fladung T. ◽  
Dieckhoff S. ◽  
Stock R.

2000 ◽  
Vol 14 (12) ◽  
pp. 437-446
Author(s):  
K. SUGAWARA

Electrical resistivity due to soft phonon (SPR) is proposed. To test SPR, resistivity measurements have been carried out for conductive single-crystal samples of the SrTiO 3 system; Sr 1-x La x TiO 3, SrTi 1-y Nb y O 3 and SrTiO 3 implanted with Fe, Cr or B. Experiments reveal a weak SPR for Sr 1-x La x TiO 3, but no noticeable SPR was found for SrTi 1-y Nb y O 3. Resistivity measurements on the ion-implanted specimens reveal rather profound SPR for low-dose (semiconducting) specimens but weak SPR for high-dose (metallic) specimens. These results indicate that the magnitude of SPR may be carrier-concentration dependent or crystallinity dependent. A possible profound SPR is proposed for SrTiO 3 under optical illumination and superlattices. Also proposed is a potential application of SPR to soft-phonon devices (SPD).


2001 ◽  
Vol 4 (9) ◽  
pp. A151 ◽  
Author(s):  
Kaoru Dokko ◽  
Matsuhiko Nishizawa ◽  
Mohamed Mohamedi ◽  
Minoru Umeda ◽  
Isamu Uchida ◽  
...  

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