Evaluation of lattice displacement and electrical property of Zn-ion implanted GaN by Rutherford backscattering spectrometry

ABSTRACTWe report on the effectiveness of proximity caps and PECVD Si3N4 caps during annealing of implanted ZnSe films. OMVPE ZnSe films were grown using diisopropylselenide (DIPSe) and diethylzinc (DEZn) precursors, then ion-implanted with 1 × 1014 cm−2 N (33 keV) or Ne (45 keV) at room temperature and liquid nitrogen temperature, and rapid thermal annealed at temperatures between 200°C and 850°C. Rutherford backscattering spectrometry in the channeling orientation was used to investigate damage recovery, and photoluminescence spectroscopy was used to investigate crystal quality and the formation of point defects. Low temperature implants were found to have better luminescence properties than room temperature implants, and results show that annealing time and temperature may be more important than capping material in determining the optical properties. The effects of various caps, implant and annealing temperature are discussed in terms of their effect on the photoluminescence spectra.

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Diffusion, Precipitation, and Cavity-Wall Reactions of Ion-Implanted Gold in Silicon

MRS Proceedings ◽

10.1557/proc-396-733 ◽

1995 ◽

Vol 396 ◽

Cited By ~ 1

Author(s):

S.M. Myers ◽

G.A. Petersen

Keyword(s):

Ion Implantation ◽

Solubility Product ◽

Rutherford Backscattering Spectrometry ◽

Rutherford Backscattering ◽

Cavity Wall ◽

Temperature Range ◽

Order Of Magnitude ◽

Diffusion Precipitation ◽

Ion Implanted

AbstractThe diffusion of Au in Si and its binding to cavities and to precipitates of the equilibrium Au-Si phase were investigated in the temperature range 1023-1123 K using ion implantation and Rutherford backscattering spectrometry. The diffusivity-solubility product for interstitial Au was found to be about an order of magnitude greater than the extrapolation of previous, indirect determinations at higher temperatures. Chemisorption on cavity walls was shown to be more stable than Au-Si precipitation by 0.1-0.3 eV in the investigated temperature range, indicating that cavities are effective gettering centers for Au impurities.

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Radiation Enhanced Diffusion in Ion-Implanted Glasses and Glass/Metal Couples

MRS Proceedings ◽

10.1557/proc-27-61 ◽

1983 ◽

Vol 27 ◽

Cited By ~ 1

Author(s):

G. W. Arnold

Keyword(s):

Rutherford Backscattering Spectrometry ◽

Diffusion Mechanism ◽

Glass Network ◽

Heavy Ion ◽

Rutherford Backscattering ◽

Enhanced Diffusion ◽

Mixed Alkali ◽

Radiation Enhanced Diffusion ◽

Glass Metal ◽

Ion Implanted

ABSTRACTIon implantation causes alkali migration to the surface in alkali silicate glasses. Rutherford backscattering spectrometry was used to follow this depletion. Room temperature implantations of 5×1016 250 keV Xe/cm2 in 12M20·88SiO2 (M = Li,Na,K,Rb,Cs) removes approximately equal numbers (within a factor of 2) of alkali from the glass. Low temperature (77K) implants significantly reduce the alkali loss. These results imply a radiationenhanced diffusion mechanism in which the alkali interchanges with the products of the collision cascade, with the kinetics being limited by the radiation damage components. The results for mixed-alkali glasses ((12−x)M2O·xCs20·88Si02) give further evidence for this process. In glass/'metal couples, radiation enhanced diffusion allows the interchange of glass network components with deposited metals. Rutherford backscattering spectrometry was used to follow the interchange of silicate and phosphate glass components with metal ions near the heavy-ion implanted interface between glass substrate and metal (Al,Zr) films.

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