Luminescence of non-bridging oxygen hole centers as a marker of particle irradiation of α-quartz

ABSTRACTGlasses of the series (mol.%) 40 Na2O, (20-x) Al2O3, x Fe2O3, 40 P2O5 were irradiated with 8 MeV electrons to doses equivalent of 0.1, 0.5, and 1.0 MGy and characterized by FTIR spectroscopy and ESR at room temperature. FTIR spectra of all the glasses consist of strong bands due to O-P-O stretching modes in (PO4)3- and (P2O7)4- units at 1000-1200 cm-1, P-O-P stretching modes at 900-950 cm-1 (νas) and 700-750 cm-1 (νs), and bending modes in the PO4 units. The wavenumber range lower 800 cm-1 has some contribution due to stretching modes in MO4 and MO6 (M = Al, Fe) units. Moreover the bands at 3300-3700 cm-1 and 1550-1650 cm-1 due to stretching and bending modes in both absorbed and structurally bound H2O molecules were present. As irradiation dose increases the bands due to stretching and bending modes in water molecules and M-O-H bonds become stronger and are split. No essential changes with increasing dose were observed within the spectral range of stretching modes of the O-P-O and P-O-P bonds. Irradiation yields phosphorus-oxygen hole centers - PO42- (D5) and PO42- (D6), and PO32- ion-radicals (D2) observable in ESR spectra of low-Fe glasses. At x>5 their responses are overlapped with strong broad line due to Fe(III). On the whole, with the increase in iron content the glass structural evolution decrease.

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Nonuniform distribution of oxygen hole centers in silica optical fibers

Applied Physics Letters ◽

10.1063/1.110139 ◽

1993 ◽

Vol 63 (25) ◽

pp. 3440-3442 ◽

Cited By ~ 4

Author(s):

S. Kannan ◽

M. E. Fineman ◽

J. Li ◽

G. H. Sigel

Keyword(s):

Optical Fibers ◽

Nonuniform Distribution ◽

Oxygen Hole ◽

Hole Centers

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Change of silica luminescence due to fast hydrogen ion bombardment

Nukleonika ◽

10.1515/nuka-2015-0063 ◽

2015 ◽

Vol 60 (2) ◽

pp. 289-292 ◽

Cited By ~ 3

Author(s):

Vitaliy P. Zhurenko ◽

Oganes V. Kalantaryan ◽

Sergiy I. Kononenko

Keyword(s):

Extended Period ◽

Implantation Dose ◽

Visible Range ◽

Blue Band ◽

Dose Accumulation ◽

Oxygen Hole ◽

Mathematical Processing ◽

Luminescent Radiation ◽

Luminescent Spectra ◽

Hole Centers

AbstractThis paper deals with the luminescence of silica (KV-type) induced by beam of hydrogen ions with the energy of 210 keV per nucleon. An average implantation dose of up to 3.5 × 1021cm−3(5 × 1010Gy) was accumulated during irradiation over an extended period. The luminescent spectra consisted of the blue band (maximum at 456 nm) and the red band (650 nm) in the visible range. It was shown that increase in the absorption dose had an effect on the silica luminescence. It was found that the most significant changes in the spectrum occurred during the dose accumulation in the region of 550–700 nm. The shape of the spectrum of the luminescent radiation in this wavelength range was affected both by the oxygen deficient centres (blue band) and non-bridging oxygen hole centers (red band). Mathematical processing of the experimental spectra permitted to identify contributions to the luminescent radiation coming from both types of defects.

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Vacuum ultraviolet excitation of the 1.9-eV emission band related to nonbridging oxygen hole centers in silica

Physical Review B ◽

10.1103/physrevb.69.153201 ◽

2004 ◽

Vol 69 (15) ◽

Cited By ~ 41

Author(s):

M. Cannas ◽

F. M. Gelardi

Keyword(s):

Emission Band ◽

Vacuum Ultraviolet ◽

Nonbridging Oxygen ◽

Ultraviolet Excitation ◽

Oxygen Hole ◽

Hole Centers

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Defect Induced by Heated Treatment in Silica Fiber Material

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.304.160 ◽

2011 ◽

Vol 304 ◽

pp. 160-164

Author(s):

Zhong Yin Xiao ◽

Wen Yun Luo ◽

Jian Xiang Wen ◽

Jian Zhong Yin ◽

Ting Yun Wang

Keyword(s):

Thermal Treatment ◽

Treatment Process ◽

Defect Formation ◽

Fiber Material ◽

Nonbridging Oxygen ◽

Pure Silica ◽

Conversion Frequency ◽

Oxygen Hole ◽

Strained Bonds ◽

Hole Centers

In this paper, defect induced by heated treatment in silica is studied. The formation process of defect is analyzed by the thermodynamic model. The results show that defect can be produced by thermal treatment process. The concentration of defect can be affected by many factors. The defect formation induced by heated treatment is related to the initial precursors. To pure silica glass, the precursors mainly come from the strained bonds of network. It can produce centers and nonbridging oxygen hole centers (NBOHCs). These defects are also related to the temperature of heated treatment and the conversion frequency between precursors and defects. The changes of defect concentration with temperature and conversion frequency are also discussed in detail.

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Thermally reversible γ-ray-induced redox reaction between substitutional iron and aluminum impurity centers in a silica glass

Journal of Materials Research ◽

10.1557/jmr.2001.0022 ◽

2001 ◽

Vol 16 (1) ◽

pp. 127-131 ◽

Cited By ~ 13

Author(s):

Radhaballabh Debnath

Keyword(s):

Silica Glass ◽

Γ Irradiation ◽

Paramagnetic Resonance ◽

Hole Trapping ◽

Oxygen Hole ◽

Before And After ◽

Impurity Centers ◽

Spin Resonances ◽

Electron Paramagnetic ◽

Hole Centers

The magnetic properties of the substitutional iron and aluminum impurity centers in a sintered Vycor silica glass were studied before and after 1.1–1.3 MeV γ irradiation. Observation of two overlapping spin resonances (g ∼ 4.20–4.28) in the spectra of both the irradiated and preirradiated glasses indicated the existence of two types of tetra coordinated substitutional iron centers of the [FeO4−/Na+]0 type. The intensity of these electron-paramagnetic resonance (EPR) signals decreased upon g irradiation of the glass with concomitant generation of aluminum hole center [AlO4]0, which was manifested by the occurrence of a new six-line EPR signal with g 4 2.009, while thermal annealing of these aluminum oxygen hole centers restores the intensity of the iron centers almost to their preirradiation level. This result suggests that if not the whole, a major fraction of the electrons released in the process of g-ray-induced hole trapping at the Al site are captured by the substitutional iron centers. The electron traps, thus formed, are quite stable and can be deactivated by thermal stimulation.

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Luminescence properties of nonbridging oxygen hole centers at the silica surface

Journal of Non-Crystalline Solids ◽

10.1016/j.jnoncrysol.2008.11.028 ◽

2009 ◽

Vol 355 (18-21) ◽

pp. 1020-1023 ◽

Cited By ~ 23

Author(s):

L. Vaccaro ◽

M. Cannas ◽

V. Radzig

Keyword(s):

Silica Surface ◽

Luminescence Properties ◽

Nonbridging Oxygen ◽

Oxygen Hole ◽

Hole Centers

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Measurement of Optical Absorption in Very Thin Low-Loss SiO2 Films

MRS Proceedings ◽

10.1557/proc-105-175 ◽

1987 ◽

Vol 105 ◽

Cited By ~ 3

Author(s):

Robert M. Curran ◽

Thomas M. Crook ◽

J. David Zook

Keyword(s):

Thin Films ◽

Optical Absorption ◽

Optical Fibers ◽

Resonant Cavity ◽

Plasma Radiation ◽

Low Loss ◽

Plasma Irradiation ◽

Oxygen Hole ◽

Low Levels ◽

Hole Centers

AbstractWhile low levels of optical absorption are easily measured in SiO2 bulk samples or optical fibers, we present here a method of detirmining low levels of absorption in thin films of SiO2. Films are deposited on top of high reflectivity multi-layer miriors, and absorption is derived from the time decay in a resonant cavity of threj mirrorsgt 633 nm. Absorption coefficients on the order of 1 cm−1. (k = 10−5) can be measured in films as thin as 100 Angstroms.With this method, we find that absorption at 633 nm can be induced in SiO2 films by exposing them to a He-Ne plasma discharge. Although the plasma radiation (>10 eV) is absorbed near the SiO2 surface, the plasma-induced absorption is uniform within the SiO2 film. This was shown by plasma irradiation of SiO2 films of 4arying thickness, together with computer calgulation of the optical properties of multilayer thin films. Similar absorption behavior has been reported in SiO2 optical fibers and may be due here to DIA (Drawing-Induced Aisorption) centers or NBOHCs (Non-Bridging Oxygen Hole Centers).

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