Influence of gamma ray irradiation and annealing temperature on the optical constants and spectral dispersion parameters of metal-free and zinc tetraphenylporphyrin thin films: A comparative study

Author(s):  
H.M. Zeyada ◽  
M.M. Makhlouf ◽  
M.M. El-Nahass
2018 ◽  
Vol 533 (1) ◽  
pp. 49-55 ◽  
Author(s):  
Sun A Yang ◽  
Byung Hoon Kim ◽  
Sang Don Bu

2016 ◽  
Vol 34 (4) ◽  
pp. 828-833 ◽  
Author(s):  
Ijaz Ali ◽  
Amjid Iqbal ◽  
Arshad Mahmood ◽  
A. Shah ◽  
M. Zakria ◽  
...  

AbstractCd1−xZnxSe (x = 0, 0.40 and 1) thin films were deposited on a glass substrate at room temperature by closed space sublimation method. Optical investigation has been performed using spectrophotometry and ellipsometry. It has been found that for as deposited films the optical band gap increased and the optical constants decreased with increasing Zn content. To improve the optical properties of Cd1−xZnxSe thin films annealing effect at 400 °C was taken into consideration for various Zn contents. It was observed that the optical transmittance and band gap decreased while optical constants increased with increasing Zn content after annealing. The effects of composition and annealing on the optical dispersion parameters Eo and Ed were investigated using a single effective oscillator model. The calculated value of the average excitation energy Eo obeys the empirical relation (Eo = Eg/2) obtained from the single oscillator model.


Author(s):  
Nadir F. Habubi

The CdO: Co films have been deposited on substrate temperature at 400 °C by spray pyrolysis method using cadmium chloride and cobalt chloride as a precursors for Cd and Co ions, respectively. The effect of annealing temperature on optical constants of Co: CdO thin films are investigated using UV-Visible spectrophotometer in the range of (300-900) nm at room temperature. The absorbance and optical parameters such as α, n, ε1, ε2, and χ are increased when the annealing temperature increases, while the energy gap decreased from 2.5 eV before annealing to 2.48 eV after 500 °C annealing temperature. Urbach energy is increased with the increasing of annealing temperature from 353 meV for sample before annealing to 715 meV for the same samples annealed at 500 °C.


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