Thermal stability of dopants in boron carbide

Conductive polyaniline/boron carbide (PANI/B4C) composites have been synthesized by in-situ polymerization of aniline in the presence of B4C particles. The structure and thermal stability of obtained composites were characterized by FTIR, XRD and TGA. The results showed that PANI and B4C particles were not simply blended, and a strong interaction existed at the interface of B4C and PANI. In the PANI/B4C composite, the degree crystalline of PANI increased and diffraction pattern of B4C was all but of amorphous. And that the composites were more thermally stable than that of the pure PANI. Electrical conductivity measurements indicated that the conductivity of PANI/B4C composites was much higher than that of the pure PANI and the maximum conductivity obtained was 35.6 S•cm-1 at 20 wt% of B4C.

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Effect of boron carbide nanoparticles on the thermal stability of carbon/phenolic composites

Polymer Composites ◽

10.1002/pc.23752 ◽

2015 ◽

Vol 38 (9) ◽

pp. 1819-1827 ◽

Cited By ~ 5

Author(s):

Marco Rallini ◽

Luigi Torre ◽

Josè M. Kenny ◽

Maurizio Natali

Keyword(s):

Thermal Stability ◽

Boron Carbide ◽

Thermal Stability Of

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Effect of boron carbide (B4C) on luminescent efficiency and thermal stability of Y3Al5O12:Ce3+ phosphors

Journal of Luminescence ◽

10.1016/j.jlumin.2020.117515 ◽

2020 ◽

Vol 226 ◽

pp. 117515

Author(s):

Chi Gu ◽

Xiao-Jun Wang ◽

Changhua Zhang ◽

Qiang-Qiang Zhu

Keyword(s):

Thermal Stability ◽

Boron Carbide ◽

Boron Carbide B4c ◽

Thermal Stability Of

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Thermal stability of Mo/Si multilayers with boron carbide interlayers

Thin Solid Films ◽

10.1016/s0040-6090(03)01028-9 ◽

2003 ◽

Vol 444 (1-2) ◽

pp. 165-173 ◽

Cited By ~ 38

Author(s):

Thomas Böttger ◽

Dirk C. Meyer ◽

Peter Paufler ◽

Stefan Braun ◽

Matthew Moss ◽

...

Keyword(s):

Thermal Stability ◽

Boron Carbide ◽

Thermal Stability Of

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Enhanced thermal stability of a cobalt–boron carbide nanocomposite by ion-implantation

International Journal of Materials Research (formerly Zeitschrift fuer Metallkunde) ◽

10.3139/146.101571 ◽

2007 ◽

Vol 98 (11) ◽

pp. 1124-1130 ◽

Cited By ~ 2

Author(s):

Melina daSilva ◽

Uta Klement ◽

Glenn D. Hibbard

Keyword(s):

Thermal Stability ◽

Ion Implantation ◽

Boron Carbide ◽

Thermal Stability Of

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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