Lattice defects related magnetic and magnetocapacitance properties of multiferroic BaFe10.2Sc1.8O19 epitaxial thin films

2022 ◽  
Vol 210 ◽  
pp. 114466
Author(s):  
Sichen Xu ◽  
Qishan Zhu ◽  
Guoqing Liang ◽  
Jianmin Zhang ◽  
Han Wang ◽  
...  
2021 ◽  
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Sanjith Unithrattil ◽  
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...  

2020 ◽  
Vol 102 (21) ◽  
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Didier Wermeille ◽  
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2021 ◽  
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Uday Deshpande ◽  
R. J. Choudhary ◽  
Parasmani Rajput ◽  
D. M. Phase ◽  
...  

2017 ◽  
Vol 1 (7) ◽  
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Irene Lucas ◽  
Pilar Jiménez-Cavero ◽  
J. M. Vila-Fungueiriño ◽  
Cesar Magén ◽  
Soraya Sangiao ◽  
...  

AIP Advances ◽  
2021 ◽  
Vol 11 (4) ◽  
pp. 045124
Author(s):  
Cacie Hart ◽  
Zoey Warecki ◽  
Grace Yong ◽  
David Houston ◽  
Rajeswari Kolagani

2010 ◽  
Vol 82 (18) ◽  
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E. Karhu ◽  
S. Kahwaji ◽  
T. L. Monchesky ◽  
C. Parsons ◽  
M. D. Robertson ◽  
...  

2013 ◽  
Vol 1507 ◽  
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Geng Tan ◽  
Daishi Shiojiri ◽  
Nobuo Tsuchimine ◽  
Koji Koyama ◽  
...  

ABSTRACTWe examined the influence of momentary annealing on the nanoscale surface morphology of NiO(111) epitaxial thin films deposited on atomically stepped sapphire (0001) substrates at room temperature in O2 at 1.3 × 10−3 and 1.3 × 10−6 Pa using a pulsed laser deposition (PLD) technique. The NiO films have atomically flat surfaces (RMS roughness: approximately 0.1–0.2 nm) reflecting the step-and-terrace structures of the substrates, regardless of the O2 deposition pressure. After rapid thermal annealing (RTA) of the NiO(111) epitaxial film deposited at 1.3 × 10−3 Pa O2, a periodic straight nanogroove array related to the atomic steps of the substrate was formed on the film surface for 60 s. In contrast, the fabrication of a transient state in the nanogroove array formation was achieved with RTA of less than 1 s. However, when the O2 atmosphere during PLD was 1.3 × 10−6 Pa, random crystal growth was observed and resulted in a disordered rough surface nanostructure after RTA.


2005 ◽  
Vol 86 (11) ◽  
pp. 112513 ◽  
Author(s):  
Yasushi Ogimoto ◽  
Naoko Takubo ◽  
Masao Nakamura ◽  
Hiroharu Tamaru ◽  
Makoto Izumi ◽  
...  

1989 ◽  
Vol 169 ◽  
Author(s):  
X.K. Wang ◽  
D.X. Li ◽  
S.N. Song ◽  
J.Q. Zheng ◽  
R.P.H. Chang ◽  
...  

AbstractEpitaxial thin films of YBaCuO were prepared by multilayer deposition from Y, Cu, and BaF2 sources with: (1) the a‐axis perpendicular to (100)SrTiO3; (2) the c‐axis perpendicular to (100)SrTiO3; and (3) the [110] axis perpendicular to (110)SrTiO3. XRD patterns as well as SEM and HREM images confirm that the films are highly oriented, essentially epitaxial. Both the a‐axis oriented and the c‐axis oriented films exhibit zero resistance at 91K. The [110] oriented film shows the sharpest transiton with a transition width of IK and zero resistance at 85K. The zero field critical current density, Jc, determined magnetically, is in excess of 107A/cm2 at 4.4K and 1.04 x 106A/cm2 at 77K for the c‐axis oriented film; for the a‐axis oriented film we obtained 6.7 x 106A/cm2 at 4.4K and 1.2 x 105A/cm2 at 77K. The orientation dependence of the critical current density in the basal plane of the a‐axis oriented film was studied. The largest Jc's occur along the in‐plane <100> axes of the substrate.


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