Separation of tetramethyl ammonium hydroxide using an MFI-type zeolite-coated membrane

2013 ◽  
Vol 120 ◽  
pp. 129-133 ◽  
Author(s):  
Syouhei Nishihama ◽  
Yasuhiro Tsutsumi ◽  
Kazuharu Yoshizuka
Keyword(s):  
Ammonium Hydroxide ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Type Zeolite ◽  
Coated Membrane

scholarly journals Doehlert design in the optimization of ultrasound assisted dissolution of fish fillet samples with tetramethyl ammonium hydroxide for metals determination using FAAS

2019 ◽  
Vol 273 ◽  
pp. 71-76 ◽  
Author(s):  
Daniélen dos Santos Silva ◽  
Carine Souza dos Santos ◽  
Luzia Aparecida Pando ◽  
Mário Sérgio Rocha Gomes ◽  
Cleber Galvão Novaes ◽  
...  
Keyword(s):  
Ammonium Hydroxide ◽  
Doehlert Design ◽  
Fish Fillet ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Ultrasound Assisted

Separation and Recovery of Tetramethyl Ammonium Hydroxide with Mesoporous Silica Having a Hexagonal Structure (MCM-41)

2012 ◽  
Vol 30 (7) ◽  
pp. 724-734 ◽  
Author(s):  
Syouhei Nishihama ◽  
Miuki Murakami ◽  
Naoko Y. Igarashi ◽  
Katsutoshi Yamamoto ◽  
Kazuharu Yoshizuka
Keyword(s):  
Mesoporous Silica ◽  
Ammonium Hydroxide ◽  
Hexagonal Structure ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Mcm 41

Experimental investigations of anisotropic etching of Si in tetramethyl ammonium hydroxide

1996 ◽  
Vol 74 (S1) ◽  
pp. 79-84 ◽  
Author(s):  
S. Naseh ◽  
L. M. Landsberger ◽  
M. Kahrizi ◽  
M. Paranjape
Keyword(s):  
Microelectromechanical Systems ◽  
Ammonium Hydroxide ◽  
Anisotropic Etching ◽  
Experimental Investigations ◽  
Rate Variation ◽  
Sensors And Actuators ◽  
Tetramethyl Ammonium ◽  
Tetramethyl Ammonium Hydroxide ◽  
Subtle Effect ◽  
Experimental Findings

Anisotropic etching of silicon in tetramethyl ammonium hydroxide (TMAH) is receiving attention as a relatively nontoxic alternative anisotropic etchant for silicon (Si), for the fabrication of microelectromechanical systems, sensors, and actuators. This work presents experimental investigations on several aspects of anisotropic etching of Si in TMAH. The effects of temperature and concentration on etch rates of {100} and {110} wafers are characterized. Several previously unreported experimental findings aimed at better understanding the atomic level mechanisms are presented: underetch-rate variation with mask-edge deviation, an investigation of stirring, and a subtle effect of applied bending stress.

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