Hydrothermal Synthesis of TiO2 Nanorods as Sensing Membrane for Extended-Gate Field-Effect Transistor (EGFET) pH Sensing Applications

Titanium dioxide (TiO2) thin films were applied as the sensing membrane of an extended-gate field-effect transistor (EGFET) pH sensor. TiO2thin films were deposited by spin coating method and the influences of the spin speed and spin duration on the pH sensing behavior of TiO2thin films were investigated. The spin coated TiO2thin films were connected to commercial metal-oxide-semiconductor field-effect transistor (MOSFET) to form the extended gates and the MOSFET was integrated in a readout interfacing circuit to complete the EGFET pH sensor system. For the spin speed parameter investigation, the highest sensitivity was obtained for the sample spun at 3000 rpm at a fixed spinning time of 60 s, which was 60.3 mV/pH. The sensitivity was further improved to achieve 68 mV/pH with good linearity of 0.9943 when the spin time was 75 s at the speed of 3000 rpm.

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Deposition of High-k Samarium Oxide Membrane on Polysilicon for the Extented-Gate Field-Effect Transistor (EGFET) Applications

Journal of New Materials for Electrochemical Systems ◽

10.14447/jnmes.v17i1.437 ◽

2014 ◽

Vol 17 (1) ◽

pp. 013-016

Author(s):

Chyuan-Haur Kao ◽

Hsiang Chen ◽

Jer-Chyi Wang ◽

Yu-Cheng Chu ◽

Chiao-Sung Lai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

High Sensitivity ◽

Great Promise ◽

Ph Sensing ◽

Samarium Oxide ◽

High K ◽

Effect Transistor ◽

Oxide Membrane ◽

Sensing Membrane

The paper reports samarium oxide as pH. sensing membrane on polysilicon combined with proper post deposition annealing for the extended-gate field-effect transistor (EGFET) application at the first time. It can be found that the high-k samarium oxide membrane annealed at 700 ºC could obtain high sensitivity, high linearity, low hysteresis voltage, and low drift rate due to improvements ofcrystalline structures. The high-k Sm2O3 sensing membrane shows great promise for future bio-medical device applications.

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High Density Horizontal-aligned Carbon Nanotube Thin Film with Oxygen Plasma Treatment as pH Sensing Membrane of Extended-Gate Field-Effect Transistor

10.7567/ssdm.2014.d-1-2 ◽

2014 ◽

Author(s):

K.Y. Wang ◽

W.L. Tsai ◽

C.H. Chou ◽

Y.R. Li ◽

C.Y. Liao ◽

...

Keyword(s):

Thin Film ◽

Carbon Nanotube ◽

Plasma Treatment ◽

Field Effect ◽

Oxygen Plasma ◽

Field Effect Transistor ◽

Oxygen Plasma Treatment ◽

Ph Sensing ◽

Effect Transistor ◽

Sensing Membrane

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CuO Nanowire-Based Extended-Gate Field-Effect-Transistor (FET) for pH Sensing and Enzyme-Free/Receptor-Free Glucose Sensing Applications

IEEE Sensors Journal ◽

10.1109/jsen.2020.2966585 ◽

2020 ◽

Vol 20 (9) ◽

pp. 5039-5047 ◽

Cited By ~ 6

Author(s):

Ashwini Kumar Mishra ◽

Deepak Kumar Jarwal ◽

Bratindranath Mukherjee ◽

Amit Kumar ◽

Smrity Ratan ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Glucose Sensing ◽

Ph Sensing ◽

Sensing Applications ◽

Free Glucose ◽

Cuo Nanowire ◽

Effect Transistor

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Electrical Characteristics and pH Response of a Parylene-H Sensing Membrane in a Si-Nanonet Ion-Sensitive Field-Effect Transistor

Sensors ◽

10.3390/s18113892 ◽

2018 ◽

Vol 18 (11) ◽

pp. 3892 ◽

Cited By ~ 3

Author(s):

Bo Jin ◽

Ga-Yeon Lee ◽

ChanOh Park ◽

Donghoon Kim ◽

Wonyeong Choi ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Ph Value ◽

Signal To Noise Ratio ◽

Low Frequency ◽

Frequency Noise ◽

Electrical Characteristics ◽

Ph Sensing ◽

Effect Transistor ◽

Sensing Membrane

We report the electrical characteristics and pH responses of a Si-nanonet ion-sensitive field-effect transistor with ultra-thin parylene-H as a gate sensing membrane. The fabricated device shows excellent DC characteristics: a low subthreshold swing of 85 mV/dec, a high current on/off ratio of ~107 and a low gate leakage current of ~10−10 A. The low interface trap density of 1.04 × 1012 cm−2 and high field-effect mobility of 510 cm2V−1s−1 were obtained. The pH responses of the devices were evaluated in various pH buffer solutions. A high pH sensitivity of 48.1 ± 0.5 mV/pH with a device-to-device variation of ~6.1% was achieved. From the low-frequency noise characterization, the signal-to-noise ratio was extracted as high as ~3400 A/A with the lowest noise equivalent pH value of ~0.002 pH. These excellent intrinsic electrical and pH sensing performances suggest that parylene-H can be promising as a sensing membrane in an ISFET-based biosensor platform.

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METAL OXIDE THIN FILMS AS PH SENSING MEMBRANE FOR EXTENDED GATE FIELD EFFECT TRANSISTOR

Jurnal Teknologi ◽

10.11113/jt.v78.8770 ◽

2016 ◽

Vol 78 (5-8) ◽

Author(s):

Muhammad AlHadi Zulkefle ◽

Rohanieza Abdul Rahman ◽

Khairul Aimi Yusof ◽

Wan Fazlida Hanim Abdullah ◽

Mohamad Rusop Mahmood ◽

...

Keyword(s):

Thin Film ◽

Thin Films ◽

Field Effect ◽

Field Effect Transistor ◽

Sol Gel ◽

Ph Sensing ◽

Tio2 Thin Films ◽

Suitable Material ◽

Effect Transistor ◽

Sensing Membrane

In this research, metal oxides (ZnO and TiO2) thin films were fabricated by the sol-gel spin coating method. The thin films were applied as the pH sensing membrane for the extended-gate field effect transistor (EGFET) sensor to distinguish the sensing capability between them. The surface morphology, thin film components and crystalline quality were characterized and the sensor performance of both materials were characterized and compared. The results showed that TiO2 thin film gave higher sensitivity with better linearity compared to the ZnO thin films hence was considered a more suitable material to be used as sensing membrane in EGFET pH sensor compared to zinc oxide.

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