Identification of types of membrane injuries and cell death using whole cell-based proton-sensitive field-effect transistor systems

Graphene channel liquid container field effect transistor pH sensor with interdigital microtrench for liquid ion testing is presented. Growth morphology and pH sensing property of continuous few-layer graphene (FLG) and quasi-continuous monolayer graphene (MG) channels are compared. The experiment results show that the source-to-drain current of the graphene channel FET has a significant and fast response after adsorption of the measured molecule and ion at the room temperature; at the same time, the FLG response time is less than 4 s. The resolution of MG (0.01) on pH value is one order of magnitude higher than that of FLG (0.1). The reason is that with fewer defects, the MG is more likely to adsorb measured molecule and ion, and the molecules and ions can make the transport property change. The output sensitivities of MG are from 34.5% to 57.4% when the pH value is between 7 and 8, while sensitivity of FLG is 4.75% when thepH=7. The sensor fabrication combines traditional silicon technique and flexible electronic technology and provides an easy way to develop graphene-based electrolyte gas sensor or even biological sensors.

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pH Sensing of Ba[sub 0.7]Sr[sub 0.3]TiO[sub 3]∕SiO[sub 2] Film for Metal-Oxide-Semiconductor and Ion-Sensitive Field-Effect Transistor Devices

Journal of The Electrochemical Society ◽

10.1149/1.3086749 ◽

2009 ◽

Vol 156 (6) ◽

pp. G59 ◽

Cited By ~ 6

Author(s):

Chun-Yuan Chen ◽

Jung-Chuan Chou ◽

Hsueh-Tao Chou

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Ph Sensing ◽

Effect Transistor

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A study of coated-wire potassium-valinomycin and sodium-monensin ion-sensing systems by use of a conventional field-effect transistor

Talanta ◽

10.1016/0039-9140(79)80005-3 ◽

1979 ◽

Vol 26 (11) ◽

pp. 1015-1018 ◽

Cited By ~ 10

Author(s):

M Thompson®

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Ion Sensing ◽

Sensing Systems ◽

Coated Wire ◽

Effect Transistor ◽

Conventional Field

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Highly Sensitive pH Sensing Using an Indium Nitride Ion-Sensitive Field-Effect Transistor

IEEE Sensors Journal ◽

10.1109/jsen.2010.2080317 ◽

2011 ◽

Vol 11 (5) ◽

pp. 1157-1161 ◽

Cited By ~ 27

Author(s):

Yuh-Hwa Chang ◽

Yen-Sheng Lu ◽

Yu-Liang Hong ◽

Shangjr Gwo ◽

J. Andrew Yeh

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Indium Nitride ◽

Ph Sensing ◽

Highly Sensitive ◽

Effect Transistor

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CVD-Grown Graphene Solution-gated Field Effect Transistors for pH Sensing

MRS Proceedings ◽

10.1557/opl.2011.583 ◽

2011 ◽

Vol 1283 ◽

Cited By ~ 1

Author(s):

Benjamin Mailly Giacchetti ◽

Allen Hsu ◽

Han Wang ◽

Ki Kang Kim ◽

Jing Kong ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Field Effect Transistors ◽

Ph Sensing ◽

Fabrication Technology ◽

Initial Characterization ◽

Effect Transistor ◽

Grown Graphene ◽

Graphene Fet

ABSTRACTThis paper presents the fabrication technology and initial characterization of electrolyte-gated field effect transistor (FET) arrays based on CVD grown graphene on copper. We show that the graphene FET (GFET), when immersed in electrolytes, exhibit a transconductance around 5 mS/mm. From preliminary pH sensing experiments, a pH sensitivity of 24 mV/pH has been demonstrated.

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