A novel parameter extraction method for the one-diode solar cell model

Solar Energy ◽  
2010 ◽  
Vol 84 (6) ◽  
pp. 1008-1019 ◽  
Author(s):  
Wook Kim ◽  
Woojin Choi
Author(s):  
Benmessaoud Mohammed Tarik ◽  
Fatima Zohra Zerhouni ◽  
Amine Boudghene Stambouli ◽  
Mustapha Tioursi ◽  
Aouad M'harer

In this chapter, we propose to perform a numerical technique based on genetic algorithms (GAs) to identify the electrical parameters (Is, Iph, Rs, Rsh, and n) of photovoltaic (PV) solar cells and modules. The one diode type approach is used to model the I–V characteristic of the solar cell. To extract electrical parameters, the approach is formulated as optimization problem. The GAs approach was used as a numerical technique in order to overcome problems involved in the local minima in the case optimization criteria. Compared to other methods, we find that the GAs is a very efficient technique to estimate the electrical parameters of photovoltaic solar cells and modules. Compared with other parameter extraction techniques, based on statistical study, results indicate the consistency and uniformity of method in terms of the quality of final solutions. In parallel, the simulated data with the extracted parameters of method base with GAs are in very good agreement with the experimental data in all cases.


2016 ◽  
pp. 1371-1390
Author(s):  
Benmessaoud Mohammed Tarik ◽  
Fatima Zohra Zerhouni ◽  
Amine Boudghene Stambouli ◽  
Mustapha Tioursi ◽  
Aouad M'harer

In this chapter, we propose to perform a numerical technique based on genetic algorithms (GAs) to identify the electrical parameters (Is, Iph, Rs, Rsh, and n) of photovoltaic (PV) solar cells and modules. The one diode type approach is used to model the I–V characteristic of the solar cell. To extract electrical parameters, the approach is formulated as optimization problem. The GAs approach was used as a numerical technique in order to overcome problems involved in the local minima in the case optimization criteria. Compared to other methods, we find that the GAs is a very efficient technique to estimate the electrical parameters of photovoltaic solar cells and modules. Compared with other parameter extraction techniques, based on statistical study, results indicate the consistency and uniformity of method in terms of the quality of final solutions. In parallel, the simulated data with the extracted parameters of method base with GAs are in very good agreement with the experimental data in all cases.


2014 ◽  
Vol 27 (1) ◽  
pp. 57-102 ◽  
Author(s):  
Adelmo Ortiz-Conde ◽  
Francisco García-Sánchez ◽  
Juan Muci ◽  
Andrea Sucre-González

This article presents an up-to-date review of several methods used for extraction of diode and solar cell model parameters. In order to facilitate the choice of the most appropriate method for the given particular application, the methods are classified according to their lumped parameter equivalent circuit model: single-exponential, double-exponential, multiple-exponential, with and without series and parallel resistances. In general, methods based on numerical integration or optimization are recommended to reduce the possible uncertainties arising from measurement noise.


2012 ◽  
Vol 2012 ◽  
pp. 1-11 ◽  
Author(s):  
Matic Herman ◽  
Marko Jankovec ◽  
Marko Topič

High-efficiency solar cells and modules exhibit strong capacitive character resulting in limited speed of transient responses. A too fastI-Vcurve measurement can thus introduce a significant error due to its internal capacitances. This paper analyses theI-Vcurve error of a measured solar cell or module in light of scan time and irradiance level. It rests on a two-diode solar cell model extended by two bias-dependent capacitances, modelling the junction, and the diffusion capacitance. A method for determination of all extended model parameters from a quasistaticI-Vcurve and open-circuit voltage decay measurement is presented and validated. Applicability of the extended model and the developed parameter extraction method to PV modules is demonstrated and confirmed. SPICE simulations of the extended model are used to obtain theI-Vcurve error versus scan time dependence and theI-Vcurve hysteresis. Determination of the optimal scan time is addressed, and finally the influence of the irradiance level on theI-Vcurve scan time and error is revealed. The method is applied but is not limited to three different wafer-based silicon solar cell types.


2011 ◽  
Vol 110 (6) ◽  
pp. 064504 ◽  
Author(s):  
Chunfu Zhang ◽  
Jincheng Zhang ◽  
Yue Hao ◽  
Zhenhua Lin ◽  
Chunxiang Zhu

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