Photoelectric characterization of Cu(In,Ga)S2 solar cells obtained from rapid thermal processing at different temperatures

2011 ◽  
Vol 95 (1) ◽  
pp. 270-273 ◽  
Author(s):  
I. Riedel ◽  
J. Riediger ◽  
J. Ohland ◽  
J. Keller ◽  
M. Knipper ◽  
...  
2006 ◽  
Vol 129 (3) ◽  
pp. 323-326
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3min long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1−xGaxSe2−ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. A RTP reactor for preparation of CIGSS thin films on 10cm×10cm substrates has been designed, assembled, and tested at the Florida Solar Energy Center’s PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by the RTP technique. Materials characterization of these films was done by scanning electron microscopy, x-ray energy dispersive spectroscopy, x-ray diffraction, Auger electron spectroscopy, electron probe microanalysis, and electrical characterization was done by current–voltage measurements on soda lime glass substrates by the RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets, and without using toxic gases.


2009 ◽  
Vol 517 (7) ◽  
pp. 2121-2124 ◽  
Author(s):  
Sachin S. Kulkarni ◽  
Galymzhan T. Koishiyev ◽  
Helio Moutinho ◽  
Neelkanth G. Dhere

Solar Energy ◽  
2006 ◽  
Author(s):  
Sachin S. Kulkarni ◽  
Jyoti S. Shirolikar ◽  
Neelkanth G. Dhere

Rapid thermal processing (RTP) provides a way to rapidly heat substrates to an elevated temperature to perform relatively short duration processes, typically less than 2–3 minutes long. RTP can be utilized to minimize the process cycle time without compromising process uniformity, thus eliminating a bottleneck in CuIn1-xGaxSe2-ySy (CIGSS) module fabrication. Some approaches have been able to realize solar cells with conversion efficiencies close or equal to those for conventionally processed solar cells with similar device structures. Florida Solar Energy Center (FSEC) PV Materials Lab has developed excellent facilities for the preparation of CIGSS thin-film solar cells. A RTP reactor for preparation of CIGSS thin films on 10 cm × 10 cm substrates has been designed, assembled and tested at the FSEC PV Materials Lab. This paper describes the synthesis and characterization of CIGSS thin-film solar cells by RTP technique. Materials characterization of these films was done by SEM, XEDS, XRD, AES, EPMA and electrical characterization was done by current-voltage measurements on soda lime glass substrates by RTP technique. Encouraging results were obtained during the first few experimental sets, demonstrating that reasonable solar cell efficiencies (up to 9%) can be achieved with relatively shorter cycle times, lower thermal budgets and without using toxic gases.


2000 ◽  
Vol 361-362 ◽  
pp. 454-457 ◽  
Author(s):  
O. Schenker ◽  
M. Klenk ◽  
E. Bucher

1985 ◽  
Vol 52 ◽  
Author(s):  
N. Shah ◽  
J. M. C. Vittie ◽  
N. Sharif ◽  
J. Nulman ◽  
A. Gat

ABSTRACTThis study describes the use of a steam environment to reflow phosphosilicate glass (PSG) samples using a HEATPULSE® rapid thermal annealer. The samples comprised PSG over poly steps and of open contacts in PSG. It was observed that reflow occurs 50°C lower in steam than in dry O2. An acceptable flow cycle for 8 w/o P in PSG glass is 1050°C for 10 seconds in steam, while for 6 w/o P PSG it is 1100°C for 10 seconds. Steam is found to be an effective amibient for densification of the PSG film. The thermal oxide grown in the contact during opening reflow was determined to be near 140 A. The operating regime for a junction depth <0.4 um and a reflow angle < 75° is presented for 8 w/o P.


1999 ◽  
Author(s):  
A. Rohatgi ◽  
S. Narasimha ◽  
P. Doshi ◽  
A. Ebong ◽  
J. Moschner

2011 ◽  
Vol 178-179 ◽  
pp. 249-252 ◽  
Author(s):  
Xiang Yang Ma ◽  
Li Ming Fu ◽  
De Ren Yang

Oxygen precipitation (OP) behaviors were investigated for Czochralski (Cz) silicon wafers, which were coated with silicon nitride (SiNx) films or not, subjected to two-step anneal of 800C/4 h+1000°C/16 h following rapid thermal processing (RTP) at different temperatures ranging from 1150 to 1250C for 50 s. It was found that OP in the Cz silicon wafers coated with SiNx films was stronger in each case. This was because that nitrogen atoms diffused into bulk of Cz silicon wafer from the surface coated SiNx film during the high temperature RTP. Furthermore, it was proved that the RTP lamp irradiation facilitated the in-diffusion of nitrogen atoms, which was most likely due to that the ultraviolet light enhanced the breakage of silicon-nitrogen bonds.


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