Advanced large area characterization of thin-film solar modules by electroluminescence and thermography imaging techniques

AbstractMulti-junction thin-film devices have emerged as very promising PV materials due to reduced cost, manufacturing ease, efficiency and long term performance. The consequent growing interest of the PV community has lead to the development of new methods for the correction of indoor measurements to standard test conditions (STC), as presented in this paper. The experimental setup for spectral response measurement of multi-junction large-area thin-film modules is presented. A method for reliable corrections of indoor current-voltage characterization to STC is presented: results are compared with outdoor measurements where irradiance conditions are close to standard ones, highlighting ongoing challenges in standard characterization of such devices.

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Integrated electrical and optical characterization of large area thin film photovoltaic materials

2012 38th IEEE Photovoltaic Specialists Conference ◽

10.1109/pvsc.2012.6317660 ◽

2012 ◽

Author(s):

Geza Szitasi ◽

Ferenc Korsos ◽

Daniel Selmeczi ◽

Oliver Takacs ◽

Ferenc Novinics ◽

...

Keyword(s):

Thin Film ◽

Optical Characterization ◽

Large Area ◽

Photovoltaic Materials

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Facile deposition and characterization of large area highly conducting and transparent Sb-doped SnO2 thin film

Applied Surface Science ◽

10.1016/j.apsusc.2019.05.079 ◽

2019 ◽

Vol 487 ◽

pp. 1385-1393 ◽

Cited By ~ 17

Author(s):

R. Ramarajan ◽

M. Kovendhan ◽

K. Thangaraju ◽

D. Paul Joseph ◽

R. Ramesh Babu

Keyword(s):

Thin Film ◽

Sno2 Thin Film ◽

Large Area

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Production and characterization of large area flexible thin film position sensitive detectors

Thin Solid Films ◽

10.1016/s0040-6090(00)01610-2 ◽

2001 ◽

Vol 383 (1-2) ◽

pp. 310-313 ◽

Cited By ~ 11

Author(s):

E. Fortunato ◽

D. Brida ◽

I. Ferreira ◽

H. Águas ◽

P. Nunes ◽

...

Keyword(s):

Thin Film ◽

Large Area ◽

Position Sensitive ◽

Position Sensitive Detectors

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Thin Film Microelectromechanical Systems

MRS Proceedings ◽

10.1557/proc-715-a12.3 ◽

2002 ◽

Vol 715 ◽

Cited By ~ 1

Author(s):

V. Chu ◽

J. Gaspar ◽

J.P. Conde

Keyword(s):

Thin Film ◽

Microelectromechanical Systems ◽

Absolute Calibration ◽

Quality Factors ◽

Large Area ◽

Glass Substrates ◽

Resonance Frequencies ◽

Bridge Structures ◽

On Chip

AbstractThis paper presents the fabrication and characterization of MEMS structures on glass substrates using thin film silicon technology and surface micromachining. The technology developed to process bridge and cantilever structures as well as the electromechanical characterization of these structures is discussed. This technology can enable the expansion of MEMS to applications requiring large area and/or flexible substrates. The main results for the characterization of the movement of the structures are as follows: (1) in the quasi-DC regime and at low applied voltages, the response is linear with the applied dc voltage. Using an electromechanical model which takes into account the constituent materials and geometry of the bilayer, it is possible to extract the deflection of the structures. This estimate suggests that it is possible to control the actuation of these structures to deflections on the sub-nanometric scale; (2) resonance frequencies of up to 20 MHz have been measured on hydrogenated amorphous silicon (a-Si:H) bridge structures with quality factors (Q) of 70-100 in air. The frequency depends inversely on the square of the structure length, as predicted by the mechanical model; and (3) using an integrated permanent magnet/magnetic sensor system, it is possible to measure the structure movement on-chip and to obtain an absolute calibration of the deflection of the structures.

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Process Simulation and Characterization of Substrate Engineered Silicon Thin Film Transistor for Display Sensors and Large Area Electronics

IOP Conference Series Materials Science and Engineering ◽

10.1088/1757-899x/51/1/012005 ◽

2013 ◽

Vol 51 ◽

pp. 012005

Author(s):

S M Hashmi ◽

S Ahmed

Keyword(s):

Thin Film ◽

Process Simulation ◽

Thin Film Transistor ◽

Large Area ◽

Silicon Thin Film ◽

Large Area Electronics

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Microwave annealing, a promising step in the roll-to-roll processing of organic electronics

Facta universitatis - series Electronics and Energetics ◽

10.2298/fuee1501143g ◽

2015 ◽

Vol 28 (1) ◽

pp. 143-151 ◽

Cited By ~ 2

Author(s):

Koen Gilissen ◽

Jeroen Stryckers ◽

Wouter Moons ◽

Jean Manca ◽

Wim Deferme

Keyword(s):

Thin Film ◽

Annealing Time ◽

Film Morphology ◽

Large Area ◽

Organic Electronic Devices ◽

Printable Electronics ◽

Light Emitting ◽

Microwave Annealing ◽

Roll To Roll

In recent years, organic printable electronics has gained more and more attention. The development and characterization of new printing techniques and functional inks is vital to accomplish solution processable, large area organic electronic devices e.g.: organic photovoltaics (OPV), organic light-emitting diodes (OLEDs). In this study a systematic comparison is made between hotplate annealing and microwave annealing of (screen) printed Poly(3,4-ethylenedioxythiophene) : poly(styrenesulfonate) (PEDOT:PSS) layers. PEDOT:PSS films treated with both techniques were characterized and compared by their thin film morphology, their electronic properties and their annealing time. It is shown that no difference in the thin film morphology and final sheet resistance was observed for microwave annealed compared to the hotplate annealed samples. Above that the annealing time is decreased up to a factor 6. These results show that microwave annealing is a feasible fast annealing technique for PEDOT:PSS thin films and can therefor reduce the total processing time of organic and PEDOT:PSS based electronic applications.

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Characterization of Y-Ba-Cu-O films grown on silicon substrates by sequential evaporation

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100106399 ◽

1988 ◽

Vol 46 ◽

pp. 866-867

Author(s):

E. L. Hall ◽

A. Mogro-Campero ◽

L. G. Turner ◽

N. Lewis

Keyword(s):

Thin Film ◽

Thin Film Deposition ◽

Superconducting Films ◽

Electron Beam Evaporation ◽

Film Deposition ◽

Silicon Substrates ◽

Superconducting Properties ◽

Sequential Electron ◽

Thin Superconducting Films

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.

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Quantitative nano-characterization of heterogeneous catalysts

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138361 ◽

1995 ◽

Vol 53 ◽

pp. 398-399

Author(s):

P.A. Crozier ◽

M. Pan

Keyword(s):

Heterogeneous Catalysts ◽

Low Dose ◽

Imaging Techniques ◽

Structural Features ◽

Catalyst Characterization ◽

New Developments ◽

Double Phase ◽

Phase Systems ◽

Dose Imaging

Heterogeneous catalysts can be of varying complexity ranging from single or double phase systems to complicated mixtures of metals and oxides with additives to help promote chemical reactions, extend the life of the catalysts, prevent poisoning etc. Although catalysis occurs on the surface of most systems, detailed descriptions of the microstructure and chemistry of catalysts can be helpful for developing an understanding of the mechanism by which a catalyst facilitates a reaction. Recent years have seen continued development and improvement of various TEM, STEM and AEM techniques for yielding information on the structure and chemistry of catalysts on the nanometer scale. Here we review some quantitative approaches to catalyst characterization that have resulted from new developments in instrumentation.HREM has been used to examine structural features of catalysts often by employing profile imaging techniques to study atomic details on the surface. Digital recording techniques employing slow-scan CCD cameras have facilitated the use of low-dose imaging in zeolite structure analysis and electron crystallography. Fig. la shows a low-dose image from SSZ-33 zeolite revealing the presence of a stacking fault.

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