Radiative recombination in silicon photovoltaics: Modeling the influence of charge carrier densities and photon recycling

2021 ◽  
Vol 230 ◽  
pp. 111198
Author(s):  
Andreas Fell ◽  
Tim Niewelt ◽  
Bernd Steinhauser ◽  
Friedemann D. Heinz ◽  
Martin C. Schubert ◽  
...  
Author(s):  
James P. Connolly

The analytical modelling of bulk and quantum well solar cells is reviewed. The analytical approach allows explicit estimates of dominant generation and recombination mechanisms at work in charge neutral and space charge layers of the cells. Consistency of the analysis of cell characteristics in the light and in the dark leaves a single free parameter, which is the mean Shockley-Read-Hall lifetime. Bulk PIN cells are shown to be inherently dominated by non-radiative recombination as a result of the doping related non-radiative fraction of the Shockley injection currents. Quantum well PIN solar cells on the other hand are shown to operate in the radiative limit as a result of the dominance of radiative recombination in the space charge region. These features are exploited using light trapping techniques leading to photon recycling and reduced radiative recombination. The conclusion is that the mirror backed quantum well solar cell device features open circuit voltages determined mainly by the higher bandgap neutral layers, with an absorption threshold determined by the lower gap quantum well superlattice.


2005 ◽  
Vol 483-485 ◽  
pp. 1039-1042
Author(s):  
Enn Velmre ◽  
Andres Udal ◽  
Mihhail Klopov

The strength of recombination radiation reabsorption in GaN is discussed. For material comparisons a distance-dependent radiative recombination transfer function F(u) is introduced. In spite of high absorption rates of GaN, calculations predict ca. one order of magnitude higher photon recycling efficiency in GaN than in GaAs. Simulations of 2H-GaN p −i −n structures predict appearance of S-shaped forward I/V characteristics due to the generation of extra carriers in the base center. The study of GaN bipolar transistors shows that the radiative recombination will reduce the carrier lifetimes in the base and thereby restrict essentially the achievable current gains.


1992 ◽  
Author(s):  
M. S. Lundstrom ◽  
M. R. Melloch ◽  
G. B. Lush ◽  
M. P. Patkar ◽  
M. Young ◽  
...  

2021 ◽  
Author(s):  
Andreas Fell ◽  
Tim Niewelt ◽  
Bernd Steinhauser ◽  
Friedemann D. Heinz ◽  
Martin C. Schubert ◽  
...  

2020 ◽  
Vol 30 (42) ◽  
pp. 2004312 ◽  
Author(s):  
Michael J. Trimpl ◽  
Adam D. Wright ◽  
Kelly Schutt ◽  
Leonardo R. V. Buizza ◽  
Zhiping Wang ◽  
...  

Author(s):  
Sascha Feldmann ◽  
Mahesh K. Gangishetty ◽  
Ivona Bravić ◽  
Timo Neumann ◽  
Bo Peng ◽  
...  

Nanophotonics ◽  
2021 ◽  
Vol 0 (0) ◽  
Author(s):  
Waseem Raja ◽  
Michele De Bastiani ◽  
Thomas G. Allen ◽  
Erkan Aydin ◽  
Arsalan Razzaq ◽  
...  

Abstract Metal halide perovskites have emerged in recent years as promising photovoltaic materials due to their excellent optical and electrical properties, enabling perovskite solar cells (PSCs) with certified power conversion efficiencies (PCEs) greater than 25%. Provided radiative recombination is the dominant recombination mechanism, photon recycling – the process of reabsorption (and re-emission) of photons that result from radiative recombination – can be utilized to further enhance the PCE toward the Shockley–Queisser (S-Q) theoretical limit. Geometrical optics can be exploited for the intentional trapping of such re-emitted photons within the device, to enhance the PCE. However, this scheme reaches its fundamental diffraction limits at the submicron scale. Therefore, introducing photonic nanostructures offer attractive solutions to manipulate and trap light at the nanoscale via light coupling into guided modes, as well as localized surface plasmon and surface plasmon polariton modes. This review focuses on light-trapping schemes for efficient photon recycling in PSCs. First, we summarize the working principles of photon recycling, which is followed by a review of essential requirements to make this process efficient. We then survey photon recycling in state-of-the-art PSCs and propose design strategies to invoke light-trapping to effectively exploit photon recycling in PSCs. Finally, we formulate a future outlook and discuss new research directions in the context of photon recycling.


1991 ◽  
Vol 240 ◽  
Author(s):  
M. MüLlenborn ◽  
N. M. Haegel

ABSTRACTPhotoluminescence spectra of AlGaAs/GaAs heterostructures with layer thicknesses in the micrometer range show excitonic recombination peaks from the AlGaAs as well as the GaAs layer. Luminescence in the buried GaAs layer may be produced by charge carrier diffusion across the interface and/or photon recycling. We have monitored the luminescence intensity from both layers as a function of laser power in order to determine the dominant generation process in the GaAs layer. The ambi polar diffusion equation has been solved to derive the charge carrier distribution. Based on these data the relative intensities of the AlGaAs and the GaAs excitonic luminescence can be used to obtain information about the interface recombination in a nondestructive way. This characterization method has been applied to investigate the quality of GaAsP/GaAs interfaces as a function of increasing lattice mismatch and dislocation density.


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