Spreading resistance modeling for rapid extraction of contact resistivity with a four-point probe

2021 ◽  
Vol 230 ◽  
pp. 111272
Author(s):  
Deniz Turkay ◽  
Konstantin Tsoi ◽  
Ergi Donercark ◽  
Rasit Turan ◽  
Selcuk Yerci
Keyword(s):  
Contact Resistivity ◽  
Spreading Resistance ◽  
Rapid Extraction ◽  
Resistance Modeling

Identification of Root Cause Failure in Silicon on Insulator Body Contacted nFETs Using Scanning Capacitance Microscopy and Scanning Spreading Resistance Microscopy

2006 ◽  
Author(s):  
J.S. McMurray ◽  
C.M. Molella
Keyword(s):  
The Body ◽  
Silicon On Insulator ◽  
Back Side ◽  
Cross Sectional ◽  
Plan View ◽  
Spreading Resistance ◽  
Scanning Capacitance Microscopy ◽  
Root Cause ◽  
Cross Sectional Imaging ◽  
Active Channel

Abstract Root cause for failure of 90 nm body contacted nFETs was identified using scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM). The failure mechanism was identified using both cross sectional imaging and imaging of the active silicon - buried oxide (BOX) interface in plan view. This is the first report of back-side plan view SCM and SSRM data for SOI devices. This unique plan view shows the root cause for the failure is an under doped link up region between the body contacts and the active channel of the device.

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