Quantized long-wavelength optical phonon modes in graphene nanoribbon in the elastic continuum model

2009 ◽  
Vol 46 (6) ◽  
pp. 881-888 ◽  
Author(s):  
Jun Qian ◽  
Matthew J. Allen ◽  
Yang Yang ◽  
Mitra Dutta ◽  
Michael A. Stroscio
Keyword(s):  
Optical Phonon ◽  
Continuum Model ◽  
Graphene Nanoribbon ◽  
Phonon Modes ◽  
Elastic Continuum ◽  
Long Wavelength

Model for Long - Wavelength Optical-Phonon Modes of Mixed Crystals

1974 ◽  
Vol 62 (1) ◽  
pp. 83-92 ◽  
Author(s):  
L. Genzel ◽  
T. P. Martin ◽  
C. H. Perry
Keyword(s):  
Optical Phonon ◽  
Mixed Crystals ◽  
Phonon Modes ◽  
Long Wavelength

PRESSURE DEPENDENCE OF ELECTRON–IO-PHONON INTERACTION IN MULTI-INTERFACE HETEROSTRUCTURE SYSTEMS

2003 ◽  
Vol 17 (31n32) ◽  
pp. 6085-6096 ◽  
Author(s):  
Z. W. YAN ◽  
S. L. BAN ◽  
X. X. LIANG
Keyword(s):  
Pressure Dependence ◽  
Transfer Matrix Method ◽  
Continuum Model ◽  
Pressure Effect ◽  
Complex Structures ◽  
Phonon Modes ◽  
Phonon Interaction ◽  
Long Wavelength ◽  
Dielectric Continuum ◽  
Dielectric Continuum Model

The interface-optical (IO) phonon modes and their interaction with electrons in a multi-heterointerfaces structure are studied by using a transfer matrix method within the framework of the dielectric continuum model. The dispersion equation of IO phonon modes and the electron–IO-phonon (e– IO -p) interaction Hamiltonian are derived by considering the pressure effect. This method facilitates systematic calculations for complex structures where the conventional method is very difficult to implement. The numerical computation has been performed for a quantum well GaN/AlN system under pressure. The e– IO -p coupling related to the IO modes with the AlN LO-frequency (phonon energy 112.46 meV) at the long-wavelength limit is strongest in the four branches of IO-phonon modes. The result indicates that the IO-phonon modes and e– IO -p interaction coupling functions increase with pressure obviously.

scholarly journals Low-frequency optical phonon modes and carrier mobility in the halide perovskite CH3NH3PbBr3 using terahertz time-domain spectroscopy

2017 ◽  
Vol 111 (20) ◽  
pp. 201903 ◽  
Author(s):  
Daming Zhao ◽  
Jonathan M. Skelton ◽  
Hongwei Hu ◽  
Chan La-o-vorakiat ◽  
Jian-Xin Zhu ◽  
...  
Keyword(s):  
Time Domain ◽  
Optical Phonon ◽  
Carrier Mobility ◽  
Low Frequency ◽  
Terahertz Time Domain Spectroscopy ◽  
Phonon Modes ◽  
Time Domain Spectroscopy ◽  
Halide Perovskite

Optical phonon modes and infrared dielectric properties of monoclinic CoWO4microcrystals

2015 ◽  
Vol 49 (4) ◽  
pp. 045305 ◽  
Author(s):  
Roberto L Moreira ◽  
Rafael M Almeida ◽  
Kisla P F Siqueira ◽  
Cintia G Abreu ◽  
Anderson Dias
Keyword(s):  
Dielectric Properties ◽  
Optical Phonon ◽  
Phonon Modes

Large diamagnetism and low-lying optical phonon modes in Pt--Cd γ-phase

2021 ◽  
pp. 163520
Author(s):  
Nazir Ahmad ◽  
Takumi Hasegawa ◽  
Naoki Nakamura ◽  
Ryuji Higashinaka ◽  
Tatsuma D. Matsuda ◽  
...  
Keyword(s):  
Optical Phonon ◽  
Phonon Modes

A Continuum Damage Model for Functionalized Graphene Membranes Based on Atomistic Simulations

2017 ◽  
Vol 754 ◽  
pp. 173-176
Author(s):  
Ivano Benedetti ◽  
R.A. Soler-Crespo ◽  
A. Pedivellano ◽  
Wei Gao ◽  
H.D. Espinosa
Keyword(s):  
Continuum Model ◽  
Damage Model ◽  
Atomistic Simulations ◽  
Band Model ◽  
Continuum Damage ◽  
Two Phase ◽  
Elastic Continuum ◽  
Continuum Damage Model ◽  
Crack Band ◽  
Hyper Elastic

A continuum model for GO membranes is developed in this study. The model is built representing the membrane as a two-dimensional, heterogeneous, two-phase continuum and the constitutive behavior of each phase (graphitic or oxidized) is built based on DFTB simulations of representative patches. A hyper-elastic continuum model is employed for the graphene areas, while a continuum damage model is more adequate for representing the behavior of oxidized regions. A finite element implementation for GO membranes subjected to degradation and failure is then implemented and, to avoid localization instabilities and spurious mesh sensitivity, a simple crack band model is adopted. The developed implementation is then used to investigate the existence of GO nano-representative volume elements.

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