Effects of in-plane electric field and temperature change on Young’s modulus of hexagonal boron nitride nanosheets with different chiralities

2014 ◽  
Vol 68 ◽  
pp. 16-26 ◽  
Author(s):  
R. Ansari ◽  
S. Malakpour ◽  
M. Faghihnasiri
2021 ◽  
Vol 2021 ◽  
pp. 1-11
Author(s):  
Philipp Bolz ◽  
Philipp Drechsel ◽  
Alexey Prosvetov ◽  
Pascal Simon ◽  
Christina Trautmann ◽  
...  

Targets of isotropic graphite and hexagonal boron nitride were exposed to short pulses of uranium ions with ∼1 GeV kinetic energy. The deposited power density of ∼3 MW/cm³ generates thermal stress in the samples leading to pressure waves. The velocity of the respective motion of the target surface was measured by laser Doppler vibrometry. The bending modes are identified as the dominant components in the velocity signal recorded as a function of time. With accumulated radiation damage, the bending mode frequency shifts towards higher values. Based on this shift, Young’s modulus of irradiated isotropic graphite is determined by comparison with ANSYS simulations. The increase of Young’s modulus up to 3 times the pristine value for the highest accumulated fluence of 3 × 1013 ions/cm2 is attributed to the beam-induced microstructural evolution into a disordered structure similar to glassy carbon. Young’s modulus values deduced from microindentation measurements are similar, confirming the validity of the method. Beam-induced stress waves remain in the elastic regime, and no large-scale damage can be observed in graphite. Hexagonal boron nitride shows lower radiation resistance. Circular cracks are generated already at low fluences, risking material failure when applied in high-dose environment.


2021 ◽  
Vol 44 ◽  
pp. 100475
Author(s):  
Xiaobin Zhu ◽  
Liang Zhang ◽  
Bin Zuo ◽  
Zhengcun Zhou ◽  
Yifei Yang ◽  
...  

2014 ◽  
Vol 140 (20) ◽  
pp. 204701 ◽  
Author(s):  
M. S. Si ◽  
Daqiang Gao ◽  
Dezheng Yang ◽  
Yong Peng ◽  
Z. Y. Zhang ◽  
...  

Nano Energy ◽  
2021 ◽  
pp. 106628
Author(s):  
Ainikulangara Sundaran Bhavya ◽  
Harris Varghese ◽  
Achu Chandran ◽  
Kuzhichalil Peethambharan Surendran

2009 ◽  
Vol 20 (38) ◽  
pp. 385707 ◽  
Author(s):  
Chun Li ◽  
Yoshio Bando ◽  
Chunyi Zhi ◽  
Yang Huang ◽  
Dmitri Golberg

Author(s):  
А.А. Андронов ◽  
В.И. Позднякова

Abstract We interpret the recent observations of Otsuji’s team (Sendai) on switching from absorption to amplification at a temperature of T = 300 K during the passage of terahertz radiation through hexagonal boron nitride–graphene sandwiches with multiple gates on the surface with an increase in the electric field in graphene. It is shown that these effects are related to dispersion and negative conductivity near the transit-time frequency of electrons in momentum space under streaming (anisotropic distribution) in graphene in a strong electric field. On the basis of these data, a universal tunable terahertz source is proposed, which has the form of a graphene-containing sandwich with a high-resistance silicon wafer (a cavity) with an applied voltage. This terahertz cavity is a complete analog of the microwave generator implemented on an InP chip by Vorobev’s team (St. Petersburg).


2010 ◽  
Vol 114 (41) ◽  
pp. 17434-17439 ◽  
Author(s):  
Yi Lin ◽  
Tiffany V. Williams ◽  
Wei Cao ◽  
Hani E. Elsayed-Ali ◽  
John W. Connell

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