Three-dimensional structural control and analysis of hexagonal boron nitride nanosheets assembly in nanocomposite films induced by electric field concentration

2014 ◽  
Vol 53 (2S) ◽  
pp. 02BD12 ◽  
Author(s):  
Takeshi Fujihara ◽  
Hong-Baek Cho ◽  
Masanao Kanno ◽  
Tadachika Nakayama ◽  
Tsuneo Suzuki ◽  
...  
2021 ◽  
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Bekir Asilcan Unlu ◽  
Ahmet Karatay ◽  
Elif Akhuseyin Yildiz ◽  
Mehmet Lutfi Yola ◽  
Mustafa Yuksek ◽  
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2021 ◽  
Vol 44 ◽  
pp. 100475
Author(s):  
Xiaobin Zhu ◽  
Liang Zhang ◽  
Bin Zuo ◽  
Zhengcun Zhou ◽  
Yifei Yang ◽  
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2014 ◽  
Vol 140 (20) ◽  
pp. 204701 ◽  
Author(s):  
M. S. Si ◽  
Daqiang Gao ◽  
Dezheng Yang ◽  
Yong Peng ◽  
Z. Y. Zhang ◽  
...  

Nano Energy ◽  
2021 ◽  
pp. 106628
Author(s):  
Ainikulangara Sundaran Bhavya ◽  
Harris Varghese ◽  
Achu Chandran ◽  
Kuzhichalil Peethambharan Surendran

2009 ◽  
Vol 20 (38) ◽  
pp. 385707 ◽  
Author(s):  
Chun Li ◽  
Yoshio Bando ◽  
Chunyi Zhi ◽  
Yang Huang ◽  
Dmitri Golberg

Author(s):  
А.А. Андронов ◽  
В.И. Позднякова

Abstract We interpret the recent observations of Otsuji’s team (Sendai) on switching from absorption to amplification at a temperature of T = 300 K during the passage of terahertz radiation through hexagonal boron nitride–graphene sandwiches with multiple gates on the surface with an increase in the electric field in graphene. It is shown that these effects are related to dispersion and negative conductivity near the transit-time frequency of electrons in momentum space under streaming (anisotropic distribution) in graphene in a strong electric field. On the basis of these data, a universal tunable terahertz source is proposed, which has the form of a graphene-containing sandwich with a high-resistance silicon wafer (a cavity) with an applied voltage. This terahertz cavity is a complete analog of the microwave generator implemented on an InP chip by Vorobev’s team (St. Petersburg).


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