The performances photodiode and diode of ZnO thin film by atomic layer deposition technique

2016 ◽  
Vol 247 ◽  
pp. 17-22 ◽  
Author(s):  
İkram Orak
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Deposition Technique ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

scholarly journals SiO2 thin film growth through a pure atomic layer deposition technique at room temperature

RSC Advances ◽  
2020 ◽  
Vol 10 (31) ◽  
pp. 18073-18081
Author(s):  
D. Arl ◽  
V. Rogé ◽  
N. Adjeroud ◽  
B. R. Pistillo ◽  
M. Sarr ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Room Temperature ◽  
Film Growth ◽  
Atomic Layer ◽  
Thin Film Growth ◽  
Deposition Technique ◽  
Sio2 Thin Film ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

In this study, less contaminated and porous SiO2 films were grown via ALD at room temperature.

scholarly journals Effect of substrate type on structure of TiO2 thin film deposited by atomic layer deposition technique

2015 ◽  
Vol 10 (1) ◽  
pp. 38-42
Author(s):  
R. S. Pessoa ◽  
F. P. Pereira ◽  
G. E. Testoni ◽  
W. Chiappim ◽  
H. S. Maciel ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
Rutherford Backscattering Spectrometry ◽  
Anatase Phase ◽  
Atomic Layer ◽  
Deposition Technique ◽  
Substrate Type ◽  
Tio2 Thin Films ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

This paper discusses about the effect of substrate type on structure of titanium dioxide thin film deposited by atomic layer deposition technique using titanium tetrachloride and deionized water as precursors. The substrates investigated are silicon (100), cover glass and titanium, and the depositions were performed at temperatures ranging from 300ºC to 450 ºC. We observed through Rutherford backscattering spectrometry that the TiO2 thin films grown on both substrates are stoichiometric. Grazing incidence x-ray diffraction showed that rutile phase could be obtained in almost pure phase at temperature of 450 ºC, however only for glass and titanium substrates. For the case of silicon (100) substrate, the anatase phase was preponderant for process temperatures investigated.

Antimicrobial coatings grown by the atomic layer deposition technique

2015 ◽  
Author(s):  
Lukasz Wachnicki ◽  
Sylwia Gieraltowska ◽  
Bartlomiej S. Witkowski ◽  
Marek Godlewski ◽  
Michal M. Godlewski ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Deposition Technique ◽  
Antimicrobial Coatings ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique

2002 ◽  
Vol 92 (11) ◽  
pp. 6739-6742 ◽  
Author(s):  
J. B. Kim ◽  
D. R. Kwon ◽  
K. Chakrabarti ◽  
Chongmu Lee ◽  
K. Y. Oh ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Atomic Layer ◽  
Dielectric Behavior ◽  
Deposition Technique ◽  
Layer Deposition ◽  
Atomic Layer Deposition Technique

High-performance ZnO thin-film transistor fabricated by atomic layer deposition

2011 ◽  
Vol 26 (8) ◽  
pp. 085007 ◽  
Author(s):  
Byeong-Yun Oh ◽  
Young-Hwan Kim ◽  
Hee-Jun Lee ◽  
Byoung-Yong Kim ◽  
Hong-Gyu Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Layer Deposition ◽  
High Performance ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition

36.3: Flexible ZnO Thin‐Film Transistors Fabricated on PEN Substrate by Atomic Layer Deposition at Low Temperature

2021 ◽  
Vol 52 (S2) ◽  
pp. 472-476
Author(s):  
Qi Li ◽  
Huijin Li ◽  
Junchen Dong ◽  
Jingyi Wang ◽  
Dedong Han ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Thin Film Transistors ◽  
Atomic Layer ◽  
Zno Thin Film ◽  
Layer Deposition
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