SiO2 thin film growth through a pure atomic layer deposition technique at room temperature
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In this study, less contaminated and porous SiO2 films were grown via ALD at room temperature.
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2011 ◽
Vol 116
(1)
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pp. 947-952
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2018 ◽
Vol 89
(12)
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pp. 123702
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2010 ◽
Vol 16
(47)
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pp. 13925-13929
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