Effect of initial oxidized layer condition on passivation quality of AlOx films deposited by atomic layer deposition technique at room temperature

Author(s):  
Chikako Sakai ◽  
Shunsuke Yamamoto ◽  
Shohei Miki ◽  
Koji Arafune ◽  
Yasushi Hotta ◽  
...  
RSC Advances ◽  
2020 ◽  
Vol 10 (31) ◽  
pp. 18073-18081
Author(s):  
D. Arl ◽  
V. Rogé ◽  
N. Adjeroud ◽  
B. R. Pistillo ◽  
M. Sarr ◽  
...  

In this study, less contaminated and porous SiO2 films were grown via ALD at room temperature.


Author(s):  
Lukasz Wachnicki ◽  
Sylwia Gieraltowska ◽  
Bartlomiej S. Witkowski ◽  
Marek Godlewski ◽  
Michal M. Godlewski ◽  
...  

2002 ◽  
Vol 92 (11) ◽  
pp. 6739-6742 ◽  
Author(s):  
J. B. Kim ◽  
D. R. Kwon ◽  
K. Chakrabarti ◽  
Chongmu Lee ◽  
K. Y. Oh ◽  
...  

2019 ◽  
Vol 7 (19) ◽  
pp. 5772-5781 ◽  
Author(s):  
Yujie Zhao ◽  
Liangjun Yin ◽  
O. M. ten Kate ◽  
Benjamin Dierre ◽  
Ruben Abellon ◽  
...  

Enhanced thermal degradation stability of the Sr2Si5N8:Eu2+ phosphor by ultra-thin Al2O3 coating through FB-ALD.


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