scholarly journals Study on the Thin-film Transistors Based on TiO2 Active-channel Using Atomic Layer Deposition Technique

Author(s):  
Sung-Jin Kim
RSC Advances ◽  
2020 ◽  
Vol 10 (31) ◽  
pp. 18073-18081
Author(s):  
D. Arl ◽  
V. Rogé ◽  
N. Adjeroud ◽  
B. R. Pistillo ◽  
M. Sarr ◽  
...  

In this study, less contaminated and porous SiO2 films were grown via ALD at room temperature.


2015 ◽  
Vol 10 (1) ◽  
pp. 38-42
Author(s):  
R. S. Pessoa ◽  
F. P. Pereira ◽  
G. E. Testoni ◽  
W. Chiappim ◽  
H. S. Maciel ◽  
...  

This paper discusses about the effect of substrate type on structure of titanium dioxide thin film deposited by atomic layer deposition technique using titanium tetrachloride and deionized water as precursors. The substrates investigated are silicon (100), cover glass and titanium, and the depositions were performed at temperatures ranging from 300ºC to 450 ºC. We observed through Rutherford backscattering spectrometry that the TiO2 thin films grown on both substrates are stoichiometric. Grazing incidence x-ray diffraction showed that rutile phase could be obtained in almost pure phase at temperature of 450 ºC, however only for glass and titanium substrates. For the case of silicon (100) substrate, the anatase phase was preponderant for process temperatures investigated.


Author(s):  
Lukasz Wachnicki ◽  
Sylwia Gieraltowska ◽  
Bartlomiej S. Witkowski ◽  
Marek Godlewski ◽  
Michal M. Godlewski ◽  
...  

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