Effect of surface treatment on electrical properties of AlGaAs/GaAs heterojunction bipolar transistor

2005 ◽  
Vol 49 (8) ◽  
pp. 1335-1340 ◽  
Author(s):  
C.H. Baek ◽  
T.K. Oh ◽  
B.K. Kang
Keyword(s):  
Electrical Properties ◽  
Surface Treatment ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Effect Of Surface

The effect of surface treatment on the electrical properties of metal contacts to boron-doped homoepitaxial diamond film

1990 ◽  
Vol 11 (2) ◽  
pp. 100-102 ◽  
Author(s):  
S.A. Grot ◽  
G.S. Gildenblat ◽  
C.W. Hatfield ◽  
C.R. Wronski ◽  
A.R. Badzian ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Surface Treatment ◽  
Diamond Film ◽  
Metal Contacts ◽  
Boron Doped ◽  
Effect Of Surface

Impact of Acceptor Concentration on Electronic Properties of n+-GaN/p+-SiC Heterojunction for GaN/SiC Heterojunction Bipolar Transistor

2007 ◽  
Vol 556-557 ◽  
pp. 1039-1042 ◽  
Author(s):  
Koichi Amari ◽  
Jun Suda ◽  
Tsunenobu Kimoto
Keyword(s):  
Electrical Properties ◽  
Electronic Properties ◽  
Electron Injection ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
View Point ◽  
Acceptor Concentration ◽  
Current Voltage ◽  
Order Of Magnitude ◽  
Heterojunction Diodes

The electrical properties of n+-GaN/p+-SiC heterojunction diodes have been investigated by varying the acceptor concentration of p+-SiC epilayers (Na) and polytype of SiC (4H- and 6H-SiC). The current-voltage (I-V) characteristics of diodes with Na ~ 1x1019 cm-3 were dominated by tunneling-assisted current. The diodes with Na ~ 1x1018 cm-3 exhibit excellent characteristics and 6H-SiC may be a better choice from a view point of electron injection into p-SiC base. Compared to previous investigations (Na<1016cm-3), we could obtain good rectification with p-SiC doped to two-order-of-magnitude higher acceptor concentration.

MICROWAVE POWER GaAs/AlGaAs HETEROJUNCTION BIPOLAR TRANSISTOR MODELLING

1988 ◽  
Vol 49 (C4) ◽  
pp. C4-579-C4-582
Author(s):  
J. G. METCALFE ◽  
R. C. HAYES ◽  
A. J. HOLDEN ◽  
A. P. LONG
Keyword(s):  
Microwave Power ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor
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