Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition

Indonesia has different weather factors than the subtropical climate that influences the performance indicators of photovoltaic systems. One of them is performance ratio that is affected by temperature factors. NREL proposes calculation method of Weather-Corrected Performance Ratio for correcting factors (temperature) in calculation performance ratio of photovoltaic systems. However, the implementation of this method in real operating condition of photovoltaic system especially in the tropics, has not received special attention. In addition, temperature coefficient of power photovoltaic (δ) in Standard Test Condition, is used in the calculation method may be different in real operating condition. This study was conducted to determine the effects of weather-corrected performance ratio method and to know characteristic of temperature coefficient of power photovoltaic (δ) as factors in of weather-corrected performance ratio method, in real operating condition especially in tropics. Through analysis photovoltaic system data from the data logger it is found that the range values of weather-corrected performance ratio are greater than conventional methods, with a maximum increase of 2.43%. Moreover it is found that because average temperature of tropical climate is higher than subtropical climate, it makes the percentage of power decrease to rise in temperature (δ) in tropical climate is higher than subtropical climate.

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Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case

Circuit World ◽

10.1108/cw-10-2016-0046 ◽

2017 ◽

Vol 43 (1) ◽

pp. 38-42 ◽

Cited By ~ 4

Author(s):

Krzysztof Górecki ◽

Damian Bisewski ◽

Janusz Zarębski ◽

Ryszard Kisiel ◽

Marcin Myśliwiec

Keyword(s):

Silicon Carbide ◽

Design Methodology ◽

Schottky Diodes ◽

Semiconductor Materials ◽

Thermal Coupling ◽

Internal Temperature ◽

Content Type ◽

Self Heating ◽

The Common ◽

Transient Thermal

Purpose This paper aims to present the results of measurements and calculations illustrating mutual thermal coupling between power Schottky diodes made of silicon carbide situated in the common case. Design/methodology/approach The idea of measurements of mutual transient thermal impedances of the investigated device is described. Findings The results of measurements of mutual transient thermal impedances between the considered diodes are shown. The experimentally verified results of calculations of the internal temperature waveforms of the considered diodes obtained with mutual thermal coupling taken into account are presented and discussed. The influence of mutual thermal coupling and a self-heating phenomenon on the internal temperature of the considered diodes is pointed out. Research limitations/implications The presented methods of measurements and calculations can be used for constructing the investigated diodes made of other semiconductor materials. Originality/value The presented results prove that mutual thermal coupling between diodes mounted in the common case must be taken into account to calculate correctly the waveforms of the device internal temperature.

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