A semi-numerical model for power AlGaAs/GaAs HBTs including self-heating and thermal-coupling companions

2002 ◽  
Author(s):  
A. Kager ◽  
J.J. Liou ◽  
L.L. Liou ◽  
C.I. Huang
Keyword(s):  
Numerical Model ◽  
Thermal Coupling ◽  
Self Heating

A Study on Self-Heating and Mutual Thermal Coupling in SiGe Multi-Finger HBTs

2016 ◽  
Vol 45 (11) ◽  
pp. 5612-5620 ◽  
Author(s):  
A. D. D. Dwivedi ◽  
Rosario D’Esposito ◽  
Amit Kumar Sahoo ◽  
Sebastien Fregonese ◽  
Thomas Zimmer
Keyword(s):  
Thermal Coupling ◽  
Self Heating

Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case

Circuit World ◽  
2017 ◽  
Vol 43 (1) ◽  
pp. 38-42 ◽  
Author(s):  
Krzysztof Górecki ◽  
Damian Bisewski ◽  
Janusz Zarębski ◽  
Ryszard Kisiel ◽  
Marcin Myśliwiec
Keyword(s):  
Silicon Carbide ◽  
Design Methodology ◽  
Schottky Diodes ◽  
Semiconductor Materials ◽  
Thermal Coupling ◽  
Internal Temperature ◽  
Content Type ◽  
Self Heating ◽  
The Common ◽  
Transient Thermal

Purpose This paper aims to present the results of measurements and calculations illustrating mutual thermal coupling between power Schottky diodes made of silicon carbide situated in the common case. Design/methodology/approach The idea of measurements of mutual transient thermal impedances of the investigated device is described. Findings The results of measurements of mutual transient thermal impedances between the considered diodes are shown. The experimentally verified results of calculations of the internal temperature waveforms of the considered diodes obtained with mutual thermal coupling taken into account are presented and discussed. The influence of mutual thermal coupling and a self-heating phenomenon on the internal temperature of the considered diodes is pointed out. Research limitations/implications The presented methods of measurements and calculations can be used for constructing the investigated diodes made of other semiconductor materials. Originality/value The presented results prove that mutual thermal coupling between diodes mounted in the common case must be taken into account to calculate correctly the waveforms of the device internal temperature.

Effects of BEOL on self-heating and thermal coupling in SiGe multi-finger HBTs under real operating condition

2016 ◽  
Vol 115 ◽  
pp. 1-6 ◽  
Author(s):  
A.D.D. Dwivedi ◽  
Anjan Chakravorty ◽  
Rosario D’Esposito ◽  
Amit Kumar Sahoo ◽  
Sebastien Fregonese ◽  
...  
Keyword(s):  
Thermal Coupling ◽  
Operating Condition ◽  
Self Heating ◽  
Real Operating Condition

A Nodal Model Dedicated to Self-Heating and Thermal Coupling Simulations

2008 ◽  
Vol 21 (2) ◽  
pp. 132-139 ◽  
Author(s):  
HÉlÈne Beckrich-Ros ◽  
Sylvie Ortolland ◽  
Denis Pache ◽  
Didier Celi ◽  
Daniel Gloria ◽  
...  
Keyword(s):  
Thermal Coupling ◽  
Self Heating ◽  
Nodal Model

Impact of self-heating and thermal coupling on analog circuits in SOI CMOS

1998 ◽  
Vol 33 (7) ◽  
pp. 1037-1046 ◽  
Author(s):  
B.M. Tenbroek ◽  
M.S.L. Lee ◽  
W. Redman-White ◽  
R.J.T. Bunyan ◽  
M.J. Uren
Keyword(s):  
Analog Circuits ◽  
Thermal Coupling ◽  
Self Heating ◽  
Soi Cmos

Efficient Modeling of Distributed Dynamic Self-Heating and Thermal Coupling in Multifinger SiGe HBTs

2016 ◽  
Vol 63 (9) ◽  
pp. 3393-3398 ◽  
Author(s):  
Suresh Balanethiram ◽  
Rosario D'Esposito ◽  
Anjan Chakravorty ◽  
Sebastien Fregonese ◽  
Didier Celi ◽  
...  
Keyword(s):  
Thermal Coupling ◽  
Self Heating ◽  
Efficient Modeling

Efficient modeling of static self-heating and thermal-coupling in multi-finger SiGe HBTs

2015 ◽  
Author(s):  
Suresh Balanethiram ◽  
Anjan Chakravorty ◽  
Rosario D'Esposito ◽  
Sebastien Fregonese ◽  
Thomas Zimmer
Keyword(s):  
Thermal Coupling ◽  
Self Heating ◽  
Efficient Modeling
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