MAS-NMR at very high temperatures

2004 ◽  
Vol 26 (2) ◽  
pp. 84-86 ◽  
Author(s):  
Leo van Wüllen ◽  
Georg Schwering ◽  
Ernst Naumann ◽  
Martin Jansen
Keyword(s):  
Mas Nmr ◽  
Author(s):  
Debashis Mukherji ◽  
Joachim Rösler ◽  
Pavel Strunz ◽  
Ralph Gilles ◽  
Gerhard Schumacher ◽  
...  

1988 ◽  
Vol 28 (3) ◽  
pp. 315-321 ◽  
Author(s):  
J. T. Malmo ◽  
O. J. Jøkberg ◽  
G. A. Slettemoen
Keyword(s):  

During the researches upon high-pressure explosions of carbonic oxide-air, hydrogen-air, etc., mixtures, which have been described in the previous papers of this series, a mass of data has been accumulated relating to the influence of density and temperature upon the internal energy of gases and the dissociation of steam and carbon dioxide. Some time ago, at Prof. Bone’s request, the author undertook a systematic survey of the data in question, and the present paper summarises some of the principal results thereof, which it is hoped will throw light upon problems interesting alike to chemists, physicists and internal-combustion engineers. The explosion method affords the only means known at present of determining the internal energies of gases at very high temperatures, and it has been used for this purpose for upwards of 50 years. Although by no means without difficulties, arising from uncertainties of some of the assumptions upon which it is based, yet, for want of a better, its results have been generally accepted as being at least provisionally valuable. Amongst the more recent investigations which have attracted attention in this connection should be mentioned those of Pier, Bjerrum, Siegel and Fenning, all of whom worked at low or medium pressures.


1989 ◽  
Vol 87 (1) ◽  
pp. 327-333 ◽  
Author(s):  
Peter Hofmann ◽  
Siegfried J. L. Hagen ◽  
Gerhard Schanz ◽  
Alfred Skokan

1987 ◽  
Vol 26 (S3-3) ◽  
pp. 2011 ◽  
Author(s):  
C. W. Chu ◽  
J. Bechtold ◽  
L. Gao ◽  
P. H. Hor ◽  
Z. J. Huang ◽  
...  
Keyword(s):  

1954 ◽  
Vol 191 (3) ◽  
pp. 132-142 ◽  
Author(s):  
Arthur Kantrowitz
Keyword(s):  

2019 ◽  
Author(s):  
Matthieu Cavaro ◽  
Kevin Paumel ◽  
Nourdine Chikhi ◽  
Pascal Fouquart ◽  
Jules Delacroix ◽  
...  

2014 ◽  
Vol 1693 ◽  
Author(s):  
Dean P. Hamilton ◽  
Michael R. Jennings ◽  
Craig A. Fisher ◽  
Yogesh K. Sharma ◽  
Stephen J. York ◽  
...  

ABSTRACTSilicon carbide power devices are purported to be capable of operating at very high temperatures. Current commercially available SiC MOSFETs from a number of manufacturers have been evaluated to understand and quantify the aging processes and temperature dependencies that occur when operated up to 350°C. High temperature constant positive bias stress tests demonstrated a two times increase in threshold voltage from the original value for some device types, which was maintained indefinitely but could be corrected with a long negative gate bias. The threshold voltages were found to decrease close to zero and the on-state resistances increased quite linearly to approximately five or six times their room temperature values. Long term thermal aging of the dies appears to demonstrate possible degradation of the ohmic contacts. This appears as a rectifying response in the I-V curves at low drain-source bias. The high temperature capability of the latest generations of these devices has been proven independently; provided that threshold voltage management is implemented, the devices are capable of being operated and are free from the effects of thermal aging for at least 70 hours cumulative at 300°C.


2018 ◽  
Vol 501 ◽  
pp. 361-370 ◽  
Author(s):  
I-Hsuan Lo ◽  
Athanasia Tzelepi ◽  
Eann A. Patterson ◽  
Tsung-Kuang Yeh

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