Characterization of TiO2 coatings prepared by a modified electric arc-physical vapour deposition system

2007 ◽  
Vol 202 (1) ◽  
pp. 13-22 ◽  
Author(s):  
Carlo Giolli ◽  
Francesca Borgioli ◽  
Alberto Credi ◽  
Alberto Di Fabio ◽  
Alessio Fossati ◽  
...  
Keyword(s):  
Vapour Deposition ◽  
Electric Arc ◽  
Physical Vapour Deposition ◽  
Tio2 Coatings

Fabrication and characterization of thin targets of nickel (61,62Ni) isotopes by physical vapour deposition technique for nuclear reaction studies

Vacuum ◽  
2019 ◽  
Vol 163 ◽  
pp. 148-157 ◽  
Author(s):  
Nabendu Kumar Deb ◽  
Kushal Kalita ◽  
S.R. Abhilash ◽  
Pankaj K. Giri ◽  
Rohan Biswas ◽  
...  
Keyword(s):  
Nuclear Reaction ◽  
Vapour Deposition ◽  
Physical Vapour Deposition ◽  
Deposition Technique ◽  
Fabrication And Characterization

scholarly journals Synthesis of Pt nanowires with the participation of physical vapour deposition

Open Physics ◽  
2016 ◽  
Vol 14 (1) ◽  
pp. 159-165
Author(s):  
Leszek A. Dobrzański ◽  
Marek Szindler ◽  
Mirosława Pawlyta ◽  
Magdalena M. Szindler ◽  
Paulina Boryło ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Vapour Deposition ◽  
Physical Vapour Deposition ◽  
X Ray Diffraction ◽  
Step Method ◽  
X Ray ◽  
Transmission Electron ◽  
Conformal Coverage ◽  
Pt Nanowires

AbstractThe following paper presents the possibility of formation of Pt nanowires, achieved by a three-step method consisting of conformal deposition of a carbon nanotube and conformal coverage with platinum by physical vapour deposition, followed by removal of the carbonaceous template. The characterization of this new nanostructure was carried out through scanning electron microscopy (SEM), transmission electron microscopy (TEM) and X-ray diffraction (XRD).

Synthesis and Characterization of Ag - Soda Glass Nanocomposites

2012 ◽  
Vol 585 ◽  
pp. 120-123
Author(s):  
Jyoti Rozra ◽  
Isha Saini ◽  
Sanjeev Aggarwal ◽  
Annu Sharma
Keyword(s):  
Silver Nanoparticles ◽  
Vapour Deposition ◽  
Scale Up ◽  
Physical Vapour Deposition ◽  
Visible Absorption ◽  
Soda Glass ◽  
Increase With Increase ◽  
Glass Slides ◽  
Uv Visible

In the present work we have used Physical vapour deposition (PVD) technique followed by thermal annealing to synthesize Ag-soda glass nanocomposite samples. This technique offers a great deal of promise in terms of general simplicity of operation, minimal requirements for sample preparation, ease of adaptation to automated operation, and potential for scale up to production levels of material throughput. Ag-glass nanocomposites were synthesized by deposited Ag on glass slides and the resulting samples were annealed in air at various temperatures from 400 °C to 550 °C for 1 hour. Optical absorption spectrum of the resulting nanocomposites was measured in the range from 190 nm to 900 nm using UV-Visible absorption spectroscopy. The appearance of SPR peak characteristic of Ag nanoparticle formation around 420 nm in optical spectra of annealed samples indicates towards the formation of silver nanoparticles in soda glass. The size of silver nanoparticles has been found to increase with increase in annealing temperatures. Structural properties of resulting nanocomposites were also studied using TEM and FE-SEM alongwith EDAX spectra. Synthesized composites are more conducting than pristine glass and conductivity increases with increase in size of Ag nanoparticles embedded in glass. Possible mechanism for increase in conductivity has been discussed.

Electron microscope characterization of MOCVD-grown gap layers on Si

1986 ◽  
Vol 44 ◽  
pp. 724-725
Author(s):  
K.M. Jones ◽  
M.M. Al-Jassim ◽  
J.M. Olson
Keyword(s):  
Atmospheric Pressure ◽  
Vapour Deposition ◽  
Chemical Vapour ◽  
Organic Chemical ◽  
Lattice Match ◽  
Si Substrates ◽  
Metal Organic ◽  
Good Lattice ◽  
Antiphase Domains

The epitaxial growth of III-V semiconductors on Si for integrated optoelectronic applications is currently of great interest. GaP, with a lattice constant close to that of Si, is an attractive buffer between Si and, for example, GaAsP. In spite of the good lattice match, the growth of device quality GaP on Si is not without difficulty. The formation of antiphase domains, the difficulty in cleaning the Si substrates prior to growth, and the poor layer morphology are some of the problems encountered. In this work, the structural perfection of GaP layers was investigated as a function of several process variables including growth rate and temperature, and Si substrate orientation. The GaP layers were grown in an atmospheric pressure metal organic chemical vapour deposition (MOCVD) system using trimethylgallium and phosphine in H2. The Si substrates orientations used were (100), 2° off (100) towards (110), (111) and (211).

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