AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.
Nanocrystalline titanium dioxide (TiO2) thin films have been prepared by dip coating method. The TiO2 thin films have been coated on glass substrate and annealed at 400, 450 and 500° C respectively. The X- ray diffraction pattern shows that TiO2 nanocrystalline thin films are of anatase structure and the grain size is found to be in the range of 20-35 nm. The annealed films have been observed to be nanocrystalline in nature and the crystallinity has been observed to improve on annealing. The surface topography of the films has been studied using atomic force microscope. The optical properties have been studied using transmittance spectra. The band gap has been found to lie in the range of 3.70 to 3.83 eV depending on the annealing temperature.
Nanocrystalline TiO2 thin films were prepared by sol-gel dip coating method. The structural investigations were carried out using x-ray diffraction technique. Anatase TiO2 thin films with tetragonal phase were obtained and the grain size was observed to lie in the range of 21-25 nm. Analysis on the surface topography of prepared films have been carried out using atomic force microscopy (AFM). The band gap energy is calculated from the absorption spectra of TiO2 films and is found to lie in the range 3.3 to 3.7 eV.
Preparation and Characterization of Nanocrystalline TiO2 Thin Films Prepared By Sol-Gel Spin Coating Method