Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films

Author(s):  
Yongxiang Li ◽  
Muralihar K. Ghantasala ◽  
Kosmas Galatsis ◽  
Wojtek Wlodarski
2001 ◽  
Vol 19 (3) ◽  
pp. 904-909 ◽  
Author(s):  
Yongxiang Li ◽  
Kosmas Galatsis ◽  
Wojtek Wlodarski ◽  
Muralihdar Ghantasala ◽  
Salvy Russo ◽  
...  

2003 ◽  
Vol 95 (1-3) ◽  
pp. 145-150 ◽  
Author(s):  
A. Trinchi ◽  
Y.X. Li ◽  
W. Wlodarski ◽  
S. Kaciulis ◽  
L. Pandolfi ◽  
...  

2012 ◽  
Vol 2 (1) ◽  
Author(s):  
Marek Nocuń ◽  
Sławomir Kwaśny

AbstractIn our investigation, V doped SiO2/TiO2 thin films were prepared on glass substrates by dip coating sol-gel technique. Chemical composition of the samples was studied by X-ray photoelectron spectroscopy (XPS). Transmittance of the samples was characterized using UV-VIS spectrophotometry. Subsequently band-gap energy (Eg) was estimated for these films. Powders obtained from sols were characterized by FTIR spectroscopy. It was found that vanadium decreases optical band gap of SSiO2/TiO2 films.


2004 ◽  
Vol 1 (S1) ◽  
pp. S116-S120 ◽  
Author(s):  
E. Sánchez-Mora ◽  
E. Gómez-Barojas ◽  
J.M. Gracia-Jiménez ◽  
R. Silva-González ◽  
F. Pérez-Rodríguez

2012 ◽  
Vol 111 (6) ◽  
pp. 064320 ◽  
Author(s):  
Paul R. Ohodnicki ◽  
Congjun Wang ◽  
Sittichai Natesakhawat ◽  
John P. Baltrus ◽  
Thomas D. Brown

2014 ◽  
Vol 12 (1-2) ◽  
pp. 192-196 ◽  
Author(s):  
Valentina Prusakova ◽  
Cristina Armellini ◽  
Alessandro Carpentiero ◽  
Andrea Chiappini ◽  
Cristian Collini ◽  
...  

2007 ◽  
Vol 124-126 ◽  
pp. 223-226 ◽  
Author(s):  
Md. Mosharaf Hossain Bhuiyan ◽  
Tsuyoshi Ueda ◽  
Tomoaki Ikegami

SnO2 thin films have been grown on Si3N4 substrates and also on Al2O3 sensor substrates with Pt interdigitated electrodes by the pulsed excimer laser deposition (PLD). Palladium doped SnO2 thin film was also prepared by the PLD method combined with the DC sputtering process. The substrate temperature and the oxygen gas pressure were changed from 300 to 500°C and from 100 to 300 mTorr, respectively during deposition. The morphology and structural properties of the prepared thin films have been studied by AFM and XRD. The gas sensing properties of the SnO2 sensor to NO gas was evaluated by measuring electrical resistance between interdigitated electrodes. The highest sensitivity of the undoped SnO2 and Pd doped sensor was found to be around 9.5 and 42, respectively.


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