Ultra-smooth and hydrophobic nitrogen-incorporated ultranano-crystalline diamond film growth in C-H-O-N gas phase system via microwave plasma CVD

Currently, novel method to synthesize diamond film on material substrate called as in-liquid microwave plasma CVD (IL-MPCVD) has been achieved. It has been studied and improved in addition expected as new method instead of conventional gas phase microwave plasma CVD (MPCVD). The purpose of this study is to synthesize single crystal diamond using IL-MPCVD in high speed deposition. The experimental conditions, methanol was poured in to the reactor. Each of diamond particles (100) and (111) was embedded on the stainless steel substrates (SUS632J2). It was mounted to the substrate holder of in-liquid plasma equipment and installed on the top cover. The distance between the tip of the electrode and the substrate was kept to 1.5mm. A microwave of 2.45GHz was irradiated into the quartz glass tube reactor from the rectangular cavity resonator with 4 mm diameter tungsten electrode and the plasma was generated at its tip. The microwave was adjusted in appropriate power to maintain a certain substrate temperature. Diamond films were evaluated by Raman spectroscopy, Scanning Electron Microscope (SEM) and Laser Microscope (LM). As a result, the best orientation for epitaxial growth was found to be (100) which have film growth gradually and smooth surface. Whereas (111) face has polycrystalline film with irregularity growth and rough surface. The remaining H and C after CO synthesis satisfying H/C>20 is necessary to synthesized diamond using IL-MPCVD. The deposition rate was about 32 μm/h when both single crystal and polycrystalline diamond film were synthesized.

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First Principles Prediction of Gas-Phase Composition and Substrate Temperature for Diamond Film Growth

Molecular Simulation ◽

10.1080/08927020008044111 ◽

2000 ◽

Vol 25 (1-2) ◽

pp. 41-51 ◽

Cited By ~ 1

Author(s):

Yanxin Li ◽

Donald W. Brenner ◽

Xialan Dong ◽

Chiachung Sun

Keyword(s):

Phase Composition ◽

Substrate Temperature ◽

Gas Phase ◽

Diamond Film ◽

First Principles ◽

Film Growth ◽

Diamond Film Growth

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Polycrystalline Diamond Film Resistors

MRS Proceedings ◽

10.1557/proc-242-165 ◽

1992 ◽

Vol 242 ◽

Author(s):

L. M. Edwards ◽

J. L. Davidson

Keyword(s):

Diamond Film ◽

Microwave Plasma ◽

Diamond Films ◽

Polycrystalline Diamond ◽

Plasma Cvd ◽

Microwave Plasma Cvd ◽

P Type ◽

Polycrystalline Diamond Film ◽

Effective Source

ABSTRACTThe technology to fabricate polycrystalline diamond film resistors has been initiated using modified thick film patterning techniques and in situ solid source doping.Doping of polycrystalline diamond films in microwave plasma CVD systems has been achieved historically through use of diborane gas, which may contaminate the deposition system causing all diamond films thereafter to be doped p-type. We have attempted noncontaminating in situ doping utilizing two solid source dopants, and have met with preliminary success.The more effective source (B2O3) produces a fairly even dopant concentration across the substrate, with sheet resistances ranging from 800 ohms per square to 4500 ohms per square. The other source (BN) showed significant doping in a narrow band surrounding the source, but the doping concentration decreased rapidly with distance from the source. Films grown afterwards with no doping were evaluated through resistance measurements; no evidence of doping contamination was observed.

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