Temperature influence on the formation of triangular features superimposed on nanoripples produced by low-energy ion beam.

Chemical Precursors for GaAs Etching with low Energy ion Beams: Chlorine adsorption on GaAs(100)

MRS Proceedings ◽

10.1557/proc-223-215 ◽

1991 ◽

Vol 223 ◽

Cited By ~ 3

Author(s):

Richard B. Jackman ◽

Glenn C. Tyrrell ◽

Duncan Marshall ◽

Catherine L. French ◽

John S. Foord

Keyword(s):

Ion Beam ◽

Ion Beams ◽

Low Energy ◽

Ion Beam Etching ◽

Chlorine Adsorption

ABSTRACTThis paper addresses the issue of chlorine adsorption on GaAs(100) with respect to the mechanisms of thermal and ion-enhanced etching. The use of halogenated precursors eg. dichloroethane is also discussed in regard to chemically assisted ion beam etching (CAIBE).

Download Full-text

TEM Sample Preparation by Single-Sided Low-Energy Ion Beam Etching

ISTFA 2011: Conference Proceedings from the 37th International Symposium for Testing and Failure Analysis ◽

10.31399/asm.cp.istfa2011p0305 ◽

2011 ◽

Author(s):

Liew Kaeng Nan ◽

Lee Meng Lung

Keyword(s):

Sample Preparation ◽

Semiconductor Device ◽

Ion Beam ◽

Critical Dimension ◽

Low Energy ◽

Ex Situ ◽

Good Image Quality ◽

Ion Beam Etching ◽

Device Structures ◽

Common Technique

Abstract Conventional FIB ex-situ lift-out is the most common technique for TEM sample preparation. However, the scaling of semiconductor device structures poses great challenge to the method since the critical dimension of device becomes smaller than normal TEM sample thickness. In this paper, a technique combining 30 keV FIB milling and 3 keV ion beam etching is introduced to prepare the TEM specimen. It can be used by existing FIBs that are not equipped with low-energy ion beam. By this method, the overlapping pattern can be eliminated while maintaining good image quality.

Download Full-text

Square hole fabrication in micro nano scale by low energy ECR ion beam irradiation

International Technology and Innovation Conference 2006 (ITIC 2006) ◽

10.1049/cp:20061054 ◽

2006 ◽

Author(s):

S.A. Pahlovy ◽

S. Momota ◽

Yao Yingxue ◽

M. Kashihara ◽

K. Nishimura

Keyword(s):

Ion Beam ◽

Low Energy ◽

Beam Irradiation ◽

Ion Beam Irradiation ◽

Nano Scale ◽

Square Hole

Download Full-text

Neutralization of low energy broad ION beam

Proceedings of 1994 IEEE 21st International Conference on Plasma Sciences (ICOPS) ◽

10.1109/plasma.1994.588948 ◽

2005 ◽

Author(s):

S.V. Dudin ◽

A.V. Zykov ◽

V.I. Farenik

Keyword(s):

Ion Beam ◽

Low Energy

Download Full-text

Low Energy 500 eV Focused Argon Ion Beam Provided by Multi-Ions Species Plasma FIB for Material Science Sample Preparations

Microscopy and Microanalysis ◽

10.1017/s1431927621000660 ◽

2021 ◽

Vol 27 (S1) ◽

pp. 20-22

Author(s):

Chengge Jiao ◽

Jeremy Graham ◽

Xu Xu ◽

Timothy Burnett ◽

Brandon van Leer

Keyword(s):

Material Science ◽

Ion Beam ◽

Low Energy ◽

Argon Ion

Download Full-text

XTEM study of low-energy ion-beam synthesized Ge nanoclusters inside SiOx matrix

Bulletin of Materials Science ◽

10.1007/s12034-020-02325-x ◽

2021 ◽

Vol 44 (1) ◽

Author(s):

SUSHEEL KUMAR GUNDANNA ◽

PUSPENDU GUHA ◽

B SUNDARAVEL ◽

UMANANDA M BHATTA

Keyword(s):

Ion Beam ◽

Low Energy

Download Full-text

Tuning surface wettability of Molybdenum Oxide nanorod mesh by low energy ion beam irradiation

Radiation Physics and Chemistry ◽

10.1016/j.radphyschem.2021.109649 ◽

2021 ◽

pp. 109649

Author(s):

Satyanarayan Dhal ◽

Pritam Das ◽

Arpita Patro ◽

Madhuchhanda Swain ◽

Sheela Rani Hota ◽

...

Keyword(s):

Molybdenum Oxide ◽

Ion Beam ◽

Low Energy ◽

Surface Wettability ◽

Beam Irradiation ◽

Ion Beam Irradiation

Download Full-text

Carbon Nitride Film Formation by Low Energy Positive and Negative Ion Beam Deposition

MRS Proceedings ◽

10.1557/proc-438-605 ◽

1996 ◽

Vol 438 ◽

Cited By ~ 2

Author(s):

N. Tsubouchi ◽

Y. Horino ◽

B. Enders ◽

A. Chayahara ◽

A. Kinomura ◽

...

Keyword(s):

Carbon Nitride ◽

Rutherford Backscattering Spectrometry ◽

Ion Beam ◽

High Vacuum ◽

Negative Ions ◽

Low Energy ◽

Ultra High Vacuum ◽

Negative Ion ◽

Nitride Film ◽

Ion Energy

AbstractUsing a newly developed ion beam apparatus, PANDA (Positive And Negative ions Deposition Apparatus), carbon nitride films were prepared by simultaneous deposition of mass-analyzed low energy positive and negative ions such as C2-, N+, under ultra high vacuum conditions, in the order of 10−6 Pa on silicon wafer. The ion energy was varied from 50 to 400 eV. The film properties as a function of their beam energy were evaluated by Rutherford Backscattering Spectrometry (RBS), Fourier Transform Infrared spectroscopy (FTIR) and Raman scattering. From the results, it is suggested that the C-N triple bond contents in films depends on nitrogen ion energy.

Download Full-text