Bias stress effect on high mobility-hysteresis free pentacene-based organic thin film transistors

2014 ◽  
Vol 191 ◽  
pp. 53-58 ◽  
Author(s):  
S.J. Fakher ◽  
A.K. Hassan ◽  
M.F. Mabrook
2010 ◽  
Vol 57 (5) ◽  
pp. 1003-1008 ◽  
Author(s):  
Kevin Kyungbum Ryu ◽  
Ivan Nausieda ◽  
David Da He ◽  
Akintunde Ibitayo Akinwande ◽  
Vladimir Bulovic ◽  
...  

2011 ◽  
Vol 257 (22) ◽  
pp. 9386-9389 ◽  
Author(s):  
A.K. Diallo ◽  
F. Fages ◽  
F. Serein-Spirau ◽  
J.-P. Lère-porte ◽  
C. Videlot-Ackermann

2008 ◽  
Vol 95 (1) ◽  
pp. 139-145 ◽  
Author(s):  
Ute Zschieschang ◽  
R. Thomas Weitz ◽  
Klaus Kern ◽  
Hagen Klauk

2021 ◽  
Vol 16 (2) ◽  
pp. 1-11
Author(s):  
José Enrique Eirez Izquierdo ◽  
José Diogo da Silva Oliveira ◽  
Vinicius Augusto Machado Nogueira ◽  
Dennis Cabrera García ◽  
Marco Roberto Cavallari ◽  
...  

This work is focused on the bias stress (BS) effects in Organic Thin-Film Transistors (OTFTs) from poly(2,5-bis(3-alkylthiophen-2-yl)thieno[3,2-b]thiophene) (PBTTT-C14) on both highly-doped Si and glass substrates. While the former had a thermally-grown SiO2 dielectric, the latter demanded an alternative dielectric that should be capable to withstand bottom contact lithography, as well as semiconducting thin-film deposition. In addition, it should represent one more step towards flexible electronics. In order to do that, poly(4-vinylphenol) (PVP) was blended to poly(melamine-co-formaldehyde) methylated (PMF). OTFTs on glass with a cross-linked polymer dielectric had a charge carrier mobility (μ) of 4.0x10-4 cm2/Vs, threshold voltage (VT) of 18 V, current modulation (ION/OFF) higher than 1x102, and subthreshold slope (SS) of -7.7 V/dec. A negative BS shifted VT towards negative values and produced an increase in ION/OFF. A positive BS, on the other hand, produced the opposite effect only for OTFTs on Si. This is believed to be due to a higher trapping at the PVP:PMF interface with PBTTT-C14. Modeling the device current along time by a stretched exponential provided shorter time constants of ca. 105 s and higher exponents of 0.7–0.9 for devices on glass. Due to the presence of increased BS effects, the application of organic TFTs based on PVP:PMF as flexible sensors will require compensating circuits, lower voltages or less measurements in time. Alternatively, BS effects could be reduced by a dielectric surface treatment.


2020 ◽  
Vol 59 (SG) ◽  
pp. SGGG08
Author(s):  
Kunihiro Oshima ◽  
Michihiro Shintani ◽  
Kazunori Kuribara ◽  
Yasuhiro Ogasahara ◽  
Takashi Sato

2019 ◽  
Vol 6 (24) ◽  
pp. 1902412 ◽  
Author(s):  
Zhongli Wang ◽  
Xianneng Song ◽  
Yu Jiang ◽  
Jidong Zhang ◽  
Xi Yu ◽  
...  

2019 ◽  
Vol 7 (12) ◽  
pp. 3656-3664 ◽  
Author(s):  
Keqiang He ◽  
Shujun Zhou ◽  
Weili Li ◽  
Hongkun Tian ◽  
Qingxin Tang ◽  
...  

Two isomeric asymmetric thienoacenes are designed and synthesized; the syn-isomer demonstrates both μsat and μlin above 10 cm2 V−1 s−1.


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