Low temperature electric transport properties in hydrogenated microcrystalline silicon films

2007 ◽  
Vol 515 (19) ◽  
pp. 7629-7633 ◽  
Author(s):  
G. Ambrosone ◽  
U. Coscia ◽  
A. Cassinese ◽  
M. Barra ◽  
S. Restello ◽  
...  
Keyword(s):  
Low Temperature ◽  
Transport Properties ◽  
Silicon Films ◽  
Electric Transport ◽  
Microcrystalline Silicon

Effect of the Annealing on the Low-Temperature Charge Transport Properties of Heavily Boron-Doped Nanocrystalline Silicon Films for Thermoelectric Applications

2016 ◽  
Vol 3 (4) ◽  
Author(s):  
Laura Zulian ◽  
Francesco Segrado ◽  
Dario Narducci
Keyword(s):  
Low Temperature ◽  
Seebeck Coefficient ◽  
Transport Properties ◽  
Nanocrystalline Silicon ◽  
Silicon Films ◽  
Thermoelectric Efficiency ◽  
Thermoelectric Power Factor ◽  
High Doping Level ◽  
Boron Doped ◽  
Nanocrystalline Silicon Films

Abstract Silicon is the reference material of microelectronics, is readily available, relatively unexpensive, and its use may take profit of a fantastic technology. This may explain why a substantial effort has focused on improving its thermoelectric efficiency, either by top-down nanostructuring or through suitable processing. In this paper we report an analysis of the electronic transport properties of heavily boron-doped nanocrystalline silicon films. High-temperature thermal treatments are confirmed to remarkably increase its thermoelectric power factor. Electrical conductivity and Hall effect measurements were carried out over the temperature range 20–300 K along with Seebeck coefficient measurements. We provide evidence of the occurrence of low-temperature hopping conduction between impurity subbands. Dopant ionization was studied as a function of temperature. Freeze-out temperature was found to correlate with the Seebeck coefficient in agreement with Pisarenko equation. This brings to the conclusion that, while untreated samples are weakly degenerate, the thermal processing reverts them into non-degenerate semiconductors, in spite of the high doping level.

Low temperature formation of microcrystalline silicon films using high-density SiH4 microwave plasma

2001 ◽  
Vol 386 (2) ◽  
pp. 261-266 ◽  
Author(s):  
Yoshikazu Sakuma ◽  
Haiping Liu ◽  
Hajime Shirai ◽  
Yoshimizu Moriya ◽  
Hiroyuki Ueyama
Keyword(s):  
Low Temperature ◽  
Microwave Plasma ◽  
High Density ◽  
Silicon Films ◽  
Microcrystalline Silicon

Microcrystalline silicon films deposited by hot-wire CVD for solar cells on low-temperature substrate

2001 ◽  
Vol 66 (1-4) ◽  
pp. 421-429 ◽  
Author(s):  
C Niikura ◽  
R Brenot ◽  
J Guillet ◽  
J.E Bourée ◽  
J.P Kleider ◽  
...  
Keyword(s):  
Solar Cells ◽  
Low Temperature ◽  
Silicon Films ◽  
Hot Wire ◽  
Microcrystalline Silicon

Hydrogenated microcrystalline silicon films produced at low temperature by the hot wire deposition method

1993 ◽  
Vol 63 (16) ◽  
pp. 2201-2203 ◽  
Author(s):  
R. O. Dusane ◽  
Suvarna R. Dusane ◽  
V. G. Bhide ◽  
S. T. Kshirsagar
Keyword(s):  
Low Temperature ◽  
Silicon Films ◽  
Deposition Method ◽  
Hot Wire ◽  
Microcrystalline Silicon
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