Zinc oxide thin film transistors using MgO–Bi1.5Zn1.0Nb1.5O7 composite gate insulator on glass substrate

2010 ◽  
Vol 518 (10) ◽  
pp. 2843-2846 ◽  
Author(s):  
Nam Gyu Cho ◽  
Dong Hun Kim ◽  
Ho-Gi Kim ◽  
Jae-Min Hong ◽  
Il-Doo Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Glass Substrate ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film

Effect of Fluorine in a Gate Insulator on the Reliability of Indium-Gallium-Zinc Oxide Thin-Film Transistors

2016 ◽  
Vol 5 (5) ◽  
pp. N17-N21 ◽  
Author(s):  
Haruka Yamazaki ◽  
Yasuaki Ishikawa ◽  
Mami N. Fujii ◽  
Juan Paolo Bermundo ◽  
Eiji Takahashi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Fabrication of Atomic Layer Deposited Zinc Oxide Thin Film Transistors with Organic Gate Insulator on Flexible Substrate

2010 ◽  
Vol 529 (1) ◽  
pp. 131-136 ◽  
Author(s):  
Kyung Min Choi ◽  
Gun Woo Hyung ◽  
Jin Woo Yang ◽  
Ja Ryong Koo ◽  
Young Kwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Flexible Substrate ◽  
Atomic Layer ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film

Transparent gallium doped zinc oxide thin-film transistors fabricated on glass substrate

2015 ◽  
Vol 594 ◽  
pp. 266-269 ◽  
Author(s):  
Dedong Han ◽  
Suoming Zhang ◽  
Feilong Zhao ◽  
Junchen Dong ◽  
Yingying Cong ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Glass Substrate ◽  
Thin Film Transistors ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film

scholarly journals Optimization of a Solution-Processed SiO2 Gate Insulator by Plasma Treatment for Zinc Oxide Thin Film Transistors

2016 ◽  
Vol 8 (3) ◽  
pp. 2061-2070 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Hyun-Gwan Kim ◽  
Man-Young Park ◽  
Hongdoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed

scholarly journals Solution-processed SiO2 gate insulator formed at low temperature for zinc oxide thin-film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (45) ◽  
pp. 36083-36087 ◽  
Author(s):  
Yesul Jeong ◽  
Christopher Pearson ◽  
Hyun-Gwan Kim ◽  
Man-Young Park ◽  
Hongdoo Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Zinc Oxide Thin Film ◽  
Solution Processed

A ZnO transistor with carrier mobility of 3 cm2 V−1 s−1 using a SiO2 insulator formed at low-temperature (180 °C) from solution-processed perhydropolysilazane.

Positive Bias Instability of Bottom-Gate Zinc Oxide Thin-Film Transistors with a SiOx/SiNx-Stacked Gate Insulator

2011 ◽  
Vol 50 (3) ◽  
pp. 03CB09 ◽  
Author(s):  
Mamoru Furuta ◽  
Yudai Kamada ◽  
Takahiro Hiramatsu ◽  
Chaoyang Li ◽  
Mutsumi Kimura ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Positive Bias ◽  
Zinc Oxide Thin Film ◽  
Bias Instability ◽  
Bottom Gate
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