Low-Frequency Noise in Amorphous Indium Zinc Oxide Thin Film Transistors with Aluminum Oxide Gate Insulator

2018 ◽  
Vol 35 (4) ◽  
pp. 048502
Author(s):  
Ya-Yi Chen ◽  
Yuan Liu ◽  
Zhao-Hui Wu ◽  
Li Wang ◽  
Bin Li ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Aluminum Oxide ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Gate Insulator ◽  
Oxide Thin Film ◽  
Frequency Noise ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

scholarly journals Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors

2014 ◽  
Vol 63 (9) ◽  
pp. 098503
Author(s):  
Liu Yuan ◽  
Wu Wei-Jing ◽  
Li Bin ◽  
En Yun-Fei ◽  
Wang Lei ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Oxide Thin Film ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Modeling of contact resistance effect on low frequency noise in indium–zinc oxide thin-film transistors

2019 ◽  
Vol 33 (17) ◽  
pp. 1950185
Author(s):  
Yuan Liu ◽  
Shu-Ting Cai ◽  
Xiao-Ming Xiong ◽  
Wei-Jun Li
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Contact Resistance ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Oxide Thin Film ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Zinc Oxide Thin Film ◽  
Indium Zinc Oxide

Low frequency noise in the indium–zinc oxide thin-film transistors (IZO TFTs) at low drain voltage is investigated in this paper. First, the contact resistance is extracted from transfer characteristics. By analyzing the noise behavior under different bias conditions, the measured noises in IZO TFTs have been separated into contributions from the channel and contacts. Determined by the channel and the contact, the normalized noise varied with two slopes ([Formula: see text] and 2) with the increment of effective gate voltage. Moreover, the values of flat-band voltage noise spectral density and Coulomb scattering parameter have been extracted. By considering contact resistance, the normalized noise has also been modeled by the use of carrier number with the correlated mobility fluctuation [Formula: see text] model.

Low-Frequency Noise in Amorphous Indium–Gallium–Zinc-Oxide Thin-Film Transistors

2009 ◽  
Vol 30 (5) ◽  
pp. 505-507 ◽  
Author(s):  
Jeong-Min Lee ◽  
Woo-Seok Cheong ◽  
Chi-Sun Hwang ◽  
In-Tak Cho ◽  
Hyuck-In Kwon ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Low Frequency ◽  
Oxide Thin Film ◽  
Frequency Noise ◽  
Indium Gallium Zinc Oxide ◽  
Low Frequency Noise ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium
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