Study on chemical vapor deposited copper films on cyano and carboxylic self-assembled monolayer diffusion barriers

2010 ◽  
Vol 518 (17) ◽  
pp. 4852-4859 ◽  
Author(s):  
Zhe Kong ◽  
Qi Wang ◽  
Liang Ding ◽  
Tao Wu
Keyword(s):  
Chemical Vapor ◽  
Diffusion Barriers ◽  
Copper Films ◽  
Self Assembled Monolayer ◽  
Chemical Vapor Deposited ◽  
Self Assembled

scholarly journals Enhanced self-assembled monolayer treatment on polymeric gate dielectrics with ultraviolet/ozone assistance in organic thin film transistors

RSC Advances ◽  
2015 ◽  
Vol 5 (79) ◽  
pp. 64471-64477 ◽  
Author(s):  
Yan Yan ◽  
Ye Zhou ◽  
Long-Biao Huang ◽  
Su-Ting Han ◽  
Li Zhou ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Chemical Vapor ◽  
Organic Thin Film Transistors ◽  
Self Assembled Monolayers ◽  
Organic Thin Film ◽  
Self Assembled Monolayer ◽  
Polymeric Insulators ◽  
Assembled Monolayers ◽  
Time Dependent Effect ◽  
Self Assembled

Chemical vapor deposition (CVD) is utilized to form self-assembled monolayers on polymeric insulators. Ultraviolet/ozone (UVO) treatment is used to enhance the alignment of HMDS monolayer on polymeric insulator surface and a time dependent effect is observed for UVO.

Amino-terminated self-assembled monolayer on a SiO2 surface formed by chemical vapor deposition

2001 ◽  
Vol 19 (4) ◽  
pp. 1812-1816 ◽  
Author(s):  
Atsushi Hozumi ◽  
Yoshiyuki Yokogawa ◽  
Tetsuya Kameyama ◽  
Hiroyuki Sugimura ◽  
Kazuyuki Hayashi ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Self Assembled Monolayer ◽  
Sio2 Surface ◽  
Self Assembled

Observation of Reduced Oxidation Rates for Plasmaassisted CVD Copper Films

1993 ◽  
Vol 309 ◽  
Author(s):  
P. J. Ding ◽  
B. Zheng ◽  
E. T. Eisenbraun ◽  
W. A. Lanford ◽  
A. E. Kaloyeros ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Oxide Growth ◽  
Copper Films ◽  
Experimental Conditions ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Plasma Reduction

AbstractOxidation kinetics of plasma-assisted chemical vapor deposited (PA-CVD) copper films were investigated using Rutherford backscattering spectrometry (RBS). The PA-CVD copper films were deposited using hydrogen plasma reduction of bis(hexafluoroacetylacetonato) copper(II), Cu(hfa)2, precursor. Under identical experimental conditions, PA-CVD copper films oxidize more slowly than sputtered copper films. This decrease in oxidationis manifested both as a time delay at the beginning of the oxidation of the PA-CVD copper films and as a decrease in the rate of oxide growth at oxidation temperatures of 200ºC and below. The possivation appears to be caused by the hydrogen plasma present during depostion.

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