Observation of Reduced Oxidation Rates for Plasmaassisted CVD Copper Films

1993 ◽  
Vol 309 ◽  
Author(s):  
P. J. Ding ◽  
B. Zheng ◽  
E. T. Eisenbraun ◽  
W. A. Lanford ◽  
A. E. Kaloyeros ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Oxide Growth ◽  
Copper Films ◽  
Experimental Conditions ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Plasma Reduction

AbstractOxidation kinetics of plasma-assisted chemical vapor deposited (PA-CVD) copper films were investigated using Rutherford backscattering spectrometry (RBS). The PA-CVD copper films were deposited using hydrogen plasma reduction of bis(hexafluoroacetylacetonato) copper(II), Cu(hfa)2, precursor. Under identical experimental conditions, PA-CVD copper films oxidize more slowly than sputtered copper films. This decrease in oxidationis manifested both as a time delay at the beginning of the oxidation of the PA-CVD copper films and as a decrease in the rate of oxide growth at oxidation temperatures of 200ºC and below. The possivation appears to be caused by the hydrogen plasma present during depostion.

Oxidation of PECVD SiC Deposited from Trimethylsilane

1998 ◽  
Vol 555 ◽  
Author(s):  
Peter A. DiFonzo ◽  
Mona Massuda ◽  
James T. Kelliher
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Oxidation Kinetics ◽  
Stoichiometric Composition ◽  
Chemical Vapor ◽  
Oxidation Rates ◽  
Chemical Vapor Deposited ◽  
Kinetics Of ◽  
Sic Films ◽  
Deposition Conditions

AbstractThe stoichiometric composition and oxidation rates ( wet or dry ) of plasma enhanced chemical vapor deposited (PECVD) silicon carbide (SiC) films are effected by the deposition conditions of trimethylsilane (3MS) and carrier gas. We report the oxidation kinetics of SiC thin films deposited in a modified commercial PECVD reactor. A standard horizontal atmospheric furnace in the temperature range of 925–1100°C was used in the oxidation. Oxidized films were measured optically by commercially available interferometer and ellipsometer tools in addition to mechanically using a commercially available profilometer. Activation energies of the parabolic rates were in the range of 20.93 to 335.26 kJ/mol.

scholarly journals Roughening kinetics of chemical vapor deposited copper films on Si(100)

1996 ◽  
Vol 68 (9) ◽  
pp. 1285-1287 ◽  
Author(s):  
L. Vázquez ◽  
J. M. Albella ◽  
R. C. Salvarezza ◽  
A. J. Arvia ◽  
R. A. Levy ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Copper Films ◽  
Chemical Vapor Deposited ◽  
Kinetics Of

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Microstuctural Evolution and Substrate Selectivity in Pecvd μc-Si

1992 ◽  
Vol 283 ◽  
Author(s):  
Gregory N. Parsons ◽  
John J. Boland ◽  
James C. Tsang
Keyword(s):  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Process Conditions ◽  
Microcrystalline Silicon ◽  
Selective Area ◽  
Initial Nucleation ◽  
Bond Strain ◽  
Manufacturing Applications ◽  
Kinetics Of ◽  
Area Deposition

ABSTRACTWe discuss a process for selective area deposition of microcrystalline silicon (μc-Si) using plasma enhanced chemical vapor deposition at low substrate temperature (<300°C) using time modulated silane flow in a hydrogen plasma. We discuss selectivity and deposition rate on a variety of substrates with process conditions important for manufacturing applications, and show a distinct microstructural evolution in the initial nucleation layers using Raman spectroscopy that correlates with the transition from selective to non-selective growth. Atomic hydrogen discriminates between different degrees of bond strain in the nucleii formed on different substrates, and can increase the crystallinity fraction in films deposited at low temperatures by modifying the kinetics of bulk-like bond formation.

Thermal oxide growth at chemical vapor deposited SiO2/Si interface during annealing evaluated by difference x-ray reflectivity

1997 ◽  
Vol 71 (14) ◽  
pp. 1954-1956 ◽  
Author(s):  
Naoki Awaji ◽  
Satoshi Ohkubo ◽  
Toshiro Nakanishi ◽  
Takayuki Aoyama ◽  
Yoshihiro Sugita ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Oxide Growth ◽  
X Ray ◽  
Thermal Oxide ◽  
Chemical Vapor Deposited

Application of a Thermobalance for studying Deposition kinetics of Diamond Films

1989 ◽  
Vol 162 ◽  
Author(s):  
Jerry Czarnecki ◽  
David Thumim
Keyword(s):  
Diamond Films ◽  
Chemical Vapor ◽  
Carbon Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposition Kinetics ◽  
Oxidation Rates ◽  
Exponential Increase ◽  
Hot Filament ◽  
Kinetics Of

ABSTRACTWeight recording using a thermobalance type Cahn TG-171 has been applied to study Hot, Filament Enhanced Chemical Vapor Deposition (HFCVD) of carbon films from methane. Changes in the deposition rates during each individual process may indicate four stages of the deposition kinetics: 1- generation of nuclei (slow, linear); 2- growth on nuclei (exponential increase); 3- aggregation of crystals (slowing); 4- growth on the surface of diamond film, completely covering the substrate (linear). An attempt to determine the concentration of graphite in the deposited layer, based on differences in oxidation rates of diamond and graphite has been proposed, as supplementary to X-ray diffraction and Raman spectroscopy.

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