Interfacial Microstructure Evolution of (B, Al)N Films Grown on Diamond Substrates

2011 ◽  
Vol 519 (13) ◽  
pp. 4212-4215 ◽  
Author(s):  
Jen-Hao Song ◽  
Jow-Lay Huang ◽  
James C. Sung ◽  
Sheng-Chang Wang ◽  
Horng-Hwa Lu ◽  
...  
2011 ◽  
Vol 239-242 ◽  
pp. 2976-2980 ◽  
Author(s):  
Ying Hui Zhang ◽  
Jing Qin ◽  
Hong Jin Zhao ◽  
Gao Lei Xu

The interfacial microstructure evolution of copper/aluminium laminates with different annealing processes was studied. It was found that the formation and growth of intermetallic compounds in the interface during metallurgical combination process have four stages: the incubation period, the formation of island-like new phases in local areas, the transverse-lengthwise-transverse growth of diffusion zone, the formation of new intermetallic compounds and thickening of diffusion zone.


2004 ◽  
Vol 810 ◽  
Author(s):  
K.Y. Lee ◽  
S.L. Liew ◽  
S.J. Chua ◽  
D.Z. Chi ◽  
H.P. Sun ◽  
...  

ABSTRACTPhase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.


2021 ◽  
Vol 853 ◽  
pp. 157120
Author(s):  
Jiaming Liu ◽  
Yubo Zhang ◽  
Zhongkai Guo ◽  
Shichao Liu ◽  
Junjia Zhang ◽  
...  

2020 ◽  
Vol 124 ◽  
pp. 106865
Author(s):  
Yufeng Huang ◽  
Xun Chen ◽  
Feng Xue ◽  
Tong Wu ◽  
Wensheng Liu ◽  
...  

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