Interfacial Microstructure Evolution Between Sn-Zn Solders and Ag Substrate During Solid-State Annealing

2014 ◽  
Vol 43 (12) ◽  
pp. 4594-4601 ◽  
Author(s):  
Chao-hong Wang ◽  
Po-yi Li ◽  
Kuan-ting Li
Keyword(s):  
Solid State ◽  
Microstructure Evolution ◽  
Interfacial Microstructure ◽  
Ag Substrate

Interfacial Microstructure Evolution of Copper/Aluminium Laminates with Different Annealing Processes

2011 ◽  
Vol 239-242 ◽  
pp. 2976-2980 ◽  
Author(s):  
Ying Hui Zhang ◽  
Jing Qin ◽  
Hong Jin Zhao ◽  
Gao Lei Xu
Keyword(s):  
Intermetallic Compounds ◽  
Incubation Period ◽  
Microstructure Evolution ◽  
Diffusion Zone ◽  
Interfacial Microstructure ◽  
Combination Process ◽  
Local Areas

The interfacial microstructure evolution of copper/aluminium laminates with different annealing processes was studied. It was found that the formation and growth of intermetallic compounds in the interface during metallurgical combination process have four stages: the incubation period, the formation of island-like new phases in local areas, the transverse-lengthwise-transverse growth of diffusion zone, the formation of new intermetallic compounds and thickening of diffusion zone.

Interfacial Microstructure Evolution of (B, Al)N Films Grown on Diamond Substrates

2011 ◽  
Vol 519 (13) ◽  
pp. 4212-4215 ◽  
Author(s):  
Jen-Hao Song ◽  
Jow-Lay Huang ◽  
James C. Sung ◽  
Sheng-Chang Wang ◽  
Horng-Hwa Lu ◽  
...  
Keyword(s):  
Microstructure Evolution ◽  
Interfacial Microstructure

Interfacial Microstructure Evolution Between Eutectic SnAgCu Solder and Al/Ni(V)/Cu Thin Films

2002 ◽  
Vol 17 (7) ◽  
pp. 1612-1621 ◽  
Author(s):  
M. Li ◽  
F. Zhang ◽  
W. T. Chen ◽  
K. Zeng ◽  
K. N. Tu ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Diagram ◽  
Solid State ◽  
Brittle Failure ◽  
Ternary Phase ◽  
Interfacial Microstructure ◽  
Snagcu Solder ◽  
Ball Shear ◽  
Aging Study ◽  
Eutectic Snpb

The evolution of interfacial microstructure of eutectic SnAgCu and SnPb solders on Al/Ni(V)/Cu thin films was investigated after various heat treatments. In the eutectic SnPb system, the Ni(V) layer was well protected after 20 reflow cycles at 220 °C. In the SnAgCu solder system, after 5 reflow cycles at 260 °C, the (Cu,Ni)6Sn5 ternary phase formed and Sn was detected in the Ni(V) layer. After 20 reflow cycles, the Ni(V) layer disappeared and spalling of the (Cu,Ni)6Sn5 was observed, which explains the transition to brittle failure mode after ball shear testing. The different interfacial reactions that occurred in the molten SnAgCu and SnPb systems were explained in terms of different solubilities of Cu in the two systems. The dissolution and formation of the (Cu,Ni)6Sn5phase were discussed on the basis of a Sn–Ni–Cu phase diagram. In the solid-state aging study of the SnAgCu samples annealed at 150 °C for up to 1000 h, the Ni(V) layer was intact and the intermetallic compound formed was Cu6Sn5 and not (Cu,Ni)6Sn5, which is the same as was observed for the eutectic SnPb system.

scholarly journals QUANTITATIVE IMAGE ANALYSIS OF MICROSTRUCTURE EVOLUTION DURING SOLID STATE SINTERING OF W-Cu

2011 ◽  
Vol 21 (2) ◽  
pp. 133
Author(s):  
Ana Maria Popa ◽  
JeanMarc Chaix
Keyword(s):  
Solid State ◽  
Microstructure Evolution ◽  
Low Voltage ◽  
Initial Mixture ◽  
Surface Wetting ◽  
Careful Preparation ◽  
Quantitative Image ◽  
Solid State Sintering ◽  
Cu Migration

The microstructure evolution of W-Cu composites during solid state sintering at 1050°C is studied on samples quenched after different sintering times. The microstructure is formed by 3 phases: tungsten (W), copper (Cu) and pores. During the process, the initial mixture of W- and Cu-powder is transformed by migration of Cu and rearrangement of W particles. These microstructural changes are studied to identify the underlying phenomena and to control the material properties. Based on experiments performed with two different W powders, this paper deals with various aspects of the quantitative analysis of the observed evolution. A careful preparation of the images is necessary. The porous samples are impregnated with a resin under vacuum before being cut and carefully polished. Low voltage (<10 kV) is used during image acquisition on a scanning electron microscope. Area fraction measurements are used to check the quality of the images and the segmentation process. Classical measurements are used to study the spreading of Cu onto the surface of W particles: surface area of each phase, area of contact between phases, chord length distributions. New measurements based on classical methods are also developed to distinguish between two mechanisms of Cu migration in the microstructure : Cu spreading on W surface (wetting of the surface), and capillary penetration in the inter-W channels. An analysis of the location of Cu and pores in the space between W particles (inter-W space) is performed using a granulometry based on 2D openings. It evidences the mechanism of capillary penetration of Cu in the inter-W space in the case of small W-particles.

Formation and Morphology Evolution of Nickel Germanides on Ge (100) under Rapid Thermal Annealing

2004 ◽  
Vol 810 ◽  
Author(s):  
K.Y. Lee ◽  
S.L. Liew ◽  
S.J. Chua ◽  
D.Z. Chi ◽  
H.P. Sun ◽  
...  
Keyword(s):  
Grain Growth ◽  
Sheet Resistance ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Microstructure Evolution ◽  
Interfacial Microstructure ◽  
Morphology Evolution ◽  
Smooth Interface ◽  
Substrate Side ◽  
Nickel Germanides

ABSTRACTPhase formation and interfacial microstructure evolution of nickel germanides formed by rapid thermal annealing in a 15-nm Ni/Ge (100) system have been studied. Coexistence of a NiGe layer and Ni-rich germanide particles was detected at 250°C. Highly textured NiGe film with a smooth interface with Ge was observed. Annealing at higher temperatures resulted in grain growth and severe grooving of the NiGe film at the substrate side, followed by serious agglomeration above 500°C. Fairly low sheet resistance was achieved in 250-500°C where the NiGe film continuity was uninterrupted.

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