Organic solar cells with p-type amorphous chromium oxide thin film as hole-transporting layer

2011 ◽  
Vol 519 (13) ◽  
pp. 4334-4341 ◽  
Author(s):  
Pingli Qin ◽  
Guojia Fang ◽  
Nanhai Sun ◽  
Xi Fan ◽  
Qiao Zheng ◽  
...  
2012 ◽  
Vol 520 (7) ◽  
pp. 3118-3124 ◽  
Author(s):  
Pingli Qin ◽  
Guojia Fang ◽  
Nanhai Sun ◽  
Xi Fan ◽  
Qiao Zheng ◽  
...  

2010 ◽  
Vol 94 (12) ◽  
pp. 2332-2336 ◽  
Author(s):  
Sun-Young Park ◽  
Hye-Ri Kim ◽  
Yong-Jin Kang ◽  
Dong-Ho Kim ◽  
Jae-Wook Kang

2014 ◽  
Vol 2 (30) ◽  
pp. 11857-11865 ◽  
Author(s):  
Masamichi Ikai ◽  
Yoshifumi Maegawa ◽  
Yasutomo Goto ◽  
Takao Tani ◽  
Shinji Inagaki

Mesoporous films containing 4,7-dithienyl-2,1,3-benzothiadiazole units in the frameworks were synthesized and demonstrated to function as a p-type layer for organic solar cells by filling an n-type PCBM in the mesopores.


2012 ◽  
Vol 482-484 ◽  
pp. 394-397
Author(s):  
Ming Wei Li ◽  
Nan Hai Sun ◽  
Yun Wang Ge ◽  
Bo Lei Yao

This paper presents a new buffering layer(nickle oxide thin film) of organic solar cells. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. And the best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.


RSC Advances ◽  
2018 ◽  
Vol 8 (30) ◽  
pp. 16887-16896 ◽  
Author(s):  
Xin Dai ◽  
Hongwei Lei ◽  
Cong Chen ◽  
Yaxiong Guo ◽  
Guojia Fang

Inorganic p-type films with high mobility are very important for opto-electronic applications.


2011 ◽  
Vol 11 (1) ◽  
pp. S47-S49 ◽  
Author(s):  
Kobsak Sriprapha ◽  
Nopphadol Sitthiphol ◽  
Puchong Sangkhawong ◽  
Vichit Sangsuwan ◽  
Amornrat Limmanee ◽  
...  

2012 ◽  
Vol 546-547 ◽  
pp. 38-41
Author(s):  
Nan Hai Sun ◽  
Ya Fei Ren

A new buffering layer(nickle oxide thin film) of organic solar cells was presented. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. The best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion.


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