P-type indium oxide thin film for the hole-transporting layer of organic solar cells

In this paper, the effects of annealing temperature and other process parameters on spin-coated indium oxide thin film transistors (In2O3-TFTs) were studied. The research shows that plasma pretreatment of glass substrate can improve the hydrophilicity of glass substrate and stability of the spin-coating process. With Fourier transform infrared (FT-IR) and X-ray diffraction (XRD) analysis, it is found that In2O3 thin films prepared by the spin coating method are amorphous, and have little organic residue when the annealing temperature ranges from 200 to 300 °C. After optimizing process conditions with the spin-coated rotating speed of 4000 rpm and the annealing temperature of 275 °C, the performance of In2O3-TFTs is best (average mobility of 1.288 cm2·V−1·s−1, Ion/Ioff of 5.93 × 106, and SS of 0.84 V·dec−1). Finally, the stability of In2O3-TFTs prepared at different annealing temperatures was analyzed by energy band theory, and we identified that the elimination of residual hydroxyl groups was the key influencing factor. Our results provide a useful reference for high-performance metal oxide semiconductor TFTs prepared by the solution method.

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Paper No S12.3: Influence of Layer Thickness and Homogeneity on Contactless Deposited High-Performance Indium Oxide Thin-Film Transistors

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.10530 ◽

2015 ◽

Vol 46 (S1) ◽

pp. 53-53

Author(s):

S. Meyer ◽

S. Grenz ◽

A. Merkulov ◽

G. Renner ◽

R. Anselmann ◽

...

Keyword(s):

Thin Film ◽

Layer Thickness ◽

Indium Oxide ◽

Thin Film Transistors ◽

High Performance ◽

Oxide Thin Film ◽

Indium Oxide Thin Film

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Synthesis of visible-light-absorptive and hole-transporting periodic mesoporous organosilica thin films for organic solar cells

Journal of Materials Chemistry A ◽

10.1039/c4ta01136h ◽

2014 ◽

Vol 2 (30) ◽

pp. 11857-11865 ◽

Cited By ~ 23

Author(s):

Masamichi Ikai ◽

Yoshifumi Maegawa ◽

Yasutomo Goto ◽

Takao Tani ◽

Shinji Inagaki

Keyword(s):

Thin Films ◽

Solar Cells ◽

Visible Light ◽

Organic Solar Cells ◽

Mesoporous Films ◽

Periodic Mesoporous Organosilica ◽

Mesoporous Organosilica ◽

Type Layer ◽

Hole Transporting ◽

P Type

Mesoporous films containing 4,7-dithienyl-2,1,3-benzothiadiazole units in the frameworks were synthesized and demonstrated to function as a p-type layer for organic solar cells by filling an n-type PCBM in the mesopores.

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A New Buffering Layer of Photovoltaic Solar Cells

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.482-484.394 ◽

2012 ◽

Vol 482-484 ◽

pp. 394-397

Author(s):

Ming Wei Li ◽

Nan Hai Sun ◽

Yun Wang Ge ◽

Bo Lei Yao

Keyword(s):

Thin Film ◽

Solar Cells ◽

Organic Solar Cells ◽

Room Temperature ◽

Acid Methyl Ester ◽

Good Alternative ◽

Oxide Thin Film ◽

Nio Thin Film ◽

Temperature Deposition ◽

Photovoltaic Solar Cells

This paper presents a new buffering layer(nickle oxide thin film) of organic solar cells. Nickle Oxide(NiO) thin film is a good alternative of hole tansporting layer. We investigates the film from physical and electrical aspects, such as morphology, deposition temperature, thickness etc. We find that the optimum fabrication conditions are: room temperature deposition, 10nm of thickness, and 30% oxygen proportion. The device strcture is Anode/NiO/P3HT[regioregular of poly(3-hexylthiophene)]: PCBM[(6,6)-phenyl C61 butyric acid methyl ester] /Al. And the best power conversion efficiency of device we got with NiO buffering layer is 2.49%, which is hundred times of ones without NiO buffering layer.

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