Fabication of one-diode-one-resistor memory cell structure of Pt/CuO/Pt/TiN/Pt/CuO/InZnOx/Pt and the effect of TiN layer on the improved resistance switching characteristics

2012 ◽  
Vol 520 (6) ◽  
pp. 2272-2277 ◽  
Author(s):  
K.H. Kim ◽  
S.R. Lee ◽  
S.-E. Ahn ◽  
M.-J. Lee ◽  
B.S. Kang
Keyword(s):  
Cell Structure ◽  
Memory Cell ◽  
Resistance Switching ◽  
Switching Characteristics

Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiN x -based resistive memory

2017 ◽  
Vol 132 ◽  
pp. 109-114 ◽  
Author(s):  
Min-Hwi Kim ◽  
Sungjun Kim ◽  
Suhyun Bang ◽  
Tae-Hyeon Kim ◽  
Dong Keun Lee ◽  
...  
Keyword(s):  
Resistance Switching ◽  
Resistive Memory ◽  
Pulse Area ◽  
Cmos Compatible ◽  
Switching Characteristics

MECHANISM STUDY ON OXYGEN VACANCY INDUCED RESISTANCE SWITCHING IN Au/LaMnO3/SrNb0.01Ti0.99O3

2013 ◽  
Vol 27 (11) ◽  
pp. 1350074 ◽  
Author(s):  
YU-LING JIN ◽  
ZHONG-TANG XU ◽  
KUI-JUAN JIN ◽  
CHEN GE ◽  
HUI-BIN LU ◽  
...  
Keyword(s):  
Oxygen Vacancy ◽  
Oxygen Vacancies ◽  
Vacancy Concentration ◽  
Resistance Switching ◽  
Switching Behavior ◽  
Oxygen Vacancy Concentration ◽  
Mechanism Study ◽  
Switching Performance ◽  
Switching Characteristics

Mechanism of resistance switching in heterostructure Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 was investigated. In Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 devices the LaMnO 3 films were fabricated under various oxygen pressures. The content of the oxygen vacancies has a significant impact on the resistance switching performance. We propose that the resistance switching characteristics of Au / LaMnO 3/ SrNb 0.01 Ti 0.99 O 3 arise from the modulation of the Au / LaMnO 3 Schottky barrier due to the change of the oxygen vacancy concentration at Au / LaMnO 3 interface under the external electric field. The effect of the oxygen vacancy concentration on the resistance switching is explained based on the self-consistent calculation. Both the experimental and numerical results confirm the important role of the oxygen vacancies in the resistance switching behavior.

A 3.6 mu m/sup 2/ memory cell structure for 16 Mb EPROMs

2003 ◽  
Author(s):  
Y.S. Hisamune ◽  
N. Kodama ◽  
K. Saitoh ◽  
T. Okazawa ◽  
H. Yamanaka ◽  
...  
Keyword(s):  
Cell Structure ◽  
Memory Cell

Bipolar Resistance Switching Characteristics in Zirconium Oxide

2013 ◽  
Vol 457 (1) ◽  
pp. 146-152 ◽  
Author(s):  
Chun-Hung Lai ◽  
Chih-Yi Liu ◽  
Hsiwen Yang
Keyword(s):  
Zirconium Oxide ◽  
Resistance Switching ◽  
Switching Characteristics ◽  
Bipolar Resistance Switching
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