A 3-D single-electron-memory cell structure with 2F/sup 2/ per bit

Author(s):  
T. Ishii ◽  
K. Yano ◽  
T. Sano ◽  
T. Mine ◽  
F. Murai ◽  
...  
2001 ◽  
Vol 40 (Part 1, No. 2A) ◽  
pp. 447-451 ◽  
Author(s):  
Ilgweon Kim ◽  
Sangyeon Han ◽  
Kwangseok Han ◽  
Jongho Lee ◽  
Hyungcheol Shin

VLSI Design ◽  
1998 ◽  
Vol 8 (1-4) ◽  
pp. 219-223 ◽  
Author(s):  
Christoph Wasshuber ◽  
Hans Kosina ◽  
Siegfried Selberherr

One of the most promising applications of single-electronics is a single-electron memory chip. Such a chip would have orders of magnitude lower power consumption compared to state-of-the-art dynamic memories, and would allow integration densities beyond the tera bit chip.We studied various single-electron memory designs. Additionally we are proposing a new memory cell which we call the T-memory cell. This cell can be manufactured with state-of-the-art lithography, it operates at room temperature and shows a strong resistance against random background charge.


2003 ◽  
Author(s):  
Y.S. Hisamune ◽  
N. Kodama ◽  
K. Saitoh ◽  
T. Okazawa ◽  
H. Yamanaka ◽  
...  
Keyword(s):  

2001 ◽  
Vol 12 (2) ◽  
pp. 178-180 ◽  
Author(s):  
Mincheol Shin ◽  
Seongjae Lee ◽  
Kyoung Wan Park

1980 ◽  
Vol 15 (2) ◽  
pp. 201-205 ◽  
Author(s):  
T. Ohzone ◽  
T. Hirao ◽  
K. Tsuji ◽  
S. Horiuchi ◽  
S. Takayanagi
Keyword(s):  

1998 ◽  
Vol 73 (15) ◽  
pp. 2134-2136 ◽  
Author(s):  
N. J. Stone ◽  
H. Ahmed
Keyword(s):  

Author(s):  
R. Shirota ◽  
R. Nakayama ◽  
R. Kirisawa ◽  
M. Momodomi ◽  
K. Sakui ◽  
...  
Keyword(s):  

2000 ◽  
Vol 39 (Part 1, No. 8) ◽  
pp. 4826-4829 ◽  
Author(s):  
Jinhee Kim ◽  
Sangchul Oh ◽  
Kyung-Hwa Yoo ◽  
Jong Wan Park ◽  
Jeong-O Lee ◽  
...  

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