Optimization of intrinsic hydrogenated amorphous silicon deposited by very high-frequency plasma-enhanced chemical vapor deposition using the relationship between Urbach energy and silane depletion fraction for solar cell application

2013 ◽  
Vol 547 ◽  
pp. 256-262 ◽  
Author(s):  
Chonghoon Shin ◽  
S.M. Iftiquar ◽  
Jinjoo Park ◽  
Youngkuk Kim ◽  
Seungshin Baek ◽  
...  
Keyword(s):  
High Frequency ◽  
Urbach Energy ◽  
Chemical Vapor ◽  
Very High Frequency ◽  
Solar Cell Application ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
The Relationship ◽  
Hydrogenated Amorphous ◽  
Very High

Microstructure and Electric Transport Characteristic of Microcrystalline Silicon Films Fabricated by Very High Frequency Plasma Enhanced Chemical Vapor Deposition

2010 ◽  
Vol 663-665 ◽  
pp. 600-603
Author(s):  
Xiang Wang ◽  
Rui Huang ◽  
Jie Song ◽  
Yan Qing Guo ◽  
Chao Song ◽  
...  
Keyword(s):  
High Frequency ◽  
Volume Fraction ◽  
Chemical Vapor ◽  
Microcrystalline Silicon ◽  
Very High Frequency ◽  
Hydrogen Flow ◽  
Transmission Electron ◽  
High Frequency Plasma ◽  
Frequency Plasma ◽  
Very High

Microcrystalline silicon (μc-Si:H) film deposited on silicon oxide in a very high frequency plasma enhanced chemical vapor deposition with highly H2 dilution of SiH4 has been investigated by Raman spectroscopy and high resolution transmission electron microscopy. Raman spectroscopy results show that the crystalline volume fraction increases with increasing the hydrogen flow rate and for the hydrogen flow rate of 160 sccm, the crystalline volume fraction reaches to 67.5%. Nearly parallel columnar structures with complex microstructure are found from cross-sectional transmission electron microscopy images of the film. The temperature depend dark conductivity and activation energy are studied in order to investigate the electronic transport processes in the nc-Si films.

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