Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode

2013 ◽  
Vol 534 ◽  
pp. 603-608 ◽  
Author(s):  
Koteswara Rao Peta ◽  
Byung-Guon Park ◽  
Sang-Tae Lee ◽  
Moon-Deock Kim ◽  
Jae-Eung Oh ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Schottky Barrier Diode

The Electrical Properties of Au/P3HT/n-Type Si Schottky Barrier Diode

2016 ◽  
Vol 11 (2) ◽  
pp. 214-218
Author(s):  
A. Asimov ◽  
M. Ahmetoğlu ◽  
A. Kirsoy ◽  
M. Özer ◽  
M. Yasin
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diode

Schottky Barrier Diode Fabricated by MOCVD-Grown Epilayer Using Bis-Trimethylsilylmethane Precursor

2008 ◽  
Vol 600-603 ◽  
pp. 971-974
Author(s):  
Ho Keun Song ◽  
Jong Ho Lee ◽  
Myeong Sook Oh ◽  
Jeong Hyun Moon ◽  
Han Seok Seo ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Grain Boundaries ◽  
Schottky Barrier ◽  
Leakage Current ◽  
Reverse Bias ◽  
Schottky Barrier Diode ◽  
High Quality ◽  
Ohmic Behavior ◽  
Leakage Path ◽  
Crystallographic Characteristics

Schottky barrier diode (SBD) was fabricated by MOCVD using bistrimethylsilylmethane (BTMSM, C7H20Si2) precursor. The 4H-SiC substrates which had different crystallographic characteristics were used for the comparison of the crystallinity effect on the electrical properties of the SBDs. From the measurement of the reverse I-V characteristics of the SBDs with micropipes, it is shown that the origin of the main leakage path and early breakdown (or ohmic behavior in reverse bias) in 4H-SiC SBDs is the grain boundaries caused by the inclusions or other defects. The best performance of SBD were shown in the epilayer grown at 1440 oC using high quality substrate, and the breakdown voltage and reverse leakage current were about 450 V and 10-9 A/cm2, respectively.

Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode

2015 ◽  
Vol 821-823 ◽  
pp. 563-566
Author(s):  
Hyun Jin Jung ◽  
Seung Bok Yun ◽  
In Ho Kang ◽  
Jeong Hyun Moon ◽  
Won Jeong Kim ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Room Temperature ◽  
Harmful Effect ◽  
Stacking Faults ◽  
Optical Microscope ◽  
Stacking Fault ◽  
Schottky Barrier Diode ◽  
The Other ◽  
Room Temperature Photoluminescence

The influence of stacking faults (SFs) and triangular defects (TDs) on the electrical properties of 4H-SiC Schottky barrier diode (SBD) were investigated. The SF types and locations were distinguished and mapped by using room-temperature photoluminescence (PL) and optical microscope. SBDs were fabricated including the location of SF’s and TD’s. The effects of the types of defects and its area portion in the fabricated SBDs were also investigated. Based on the present data, 3C-TD has more harmful effect rather than the other SFs. The fabricated SBDs including SFs showed that increase of area portion of SF’s also resulted increase of specific on resistance of SBDs.

Electrical properties of Al/PTB7-Th/n-Si metal-polymer-semiconductor Schottky barrier diode

2016 ◽  
Vol 221 ◽  
pp. 169-175 ◽  
Author(s):  
Lih Wei Lim ◽  
Fakhra Aziz ◽  
Fahmi F. Muhammad ◽  
Azzuliani Supangat ◽  
Khaulah Sulaiman
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Schottky Barrier Diode ◽  
Polymer Semiconductor ◽  
Metal Polymer

Electrical Properties of Copper Silicide/Silicon Interfaces

1993 ◽  
Vol 320 ◽  
Author(s):  
B.G. Svensson
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Deep Level ◽  
Ion Beam ◽  
Energy Levels ◽  
Copper Silicide ◽  
Barrier Heights ◽  
Barrier Formation ◽  
Transient Spectroscopy ◽  
P Type

ABSTRACTThe electrical properties of Cu/Si(100) and Cu3Si/Si(100) interfaces have been studied using both n- and p-type silicon samples. Current-voltage and capacitance-voltage measurements were performed in the temperature range 80-295 K in order to monitor Schottky barrier formation and electrical carrier concentration profiles. Deep-level transient spectroscopy was employed to observe Cu-related energy levels in the forbidden band gap of Si, and different ion beam analysis techniques were applied to study the interfacial reaction between Cu and Si. Emphasis is put on determination of Schottky barrier heights and their variation with temperature, dopant passivation by Cu atoms and interaction of Cu with irradiation-induced point defects in silicon.

Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

2015 ◽  
Vol 24 (9) ◽  
pp. 097303 ◽  
Author(s):  
Jian Zhong ◽  
Yao Yao ◽  
Yue Zheng ◽  
Fan Yang ◽  
Yi-Qiang Ni ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Schottky Barrier ◽  
Dry Etching ◽  
Schottky Barrier Diode
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